Related papers: Pure spin current transport in a SiGe alloy
Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations. As an open question in semiconductor spintronics, the…
The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry with strongly inhomogeneous current flow. As an…
The spin diffusion length for thermally excited magnon spins is measured by utilizing a non-local spin-Seebeck effect measurement. In a bulk single crystal of yttrium iron garnet (YIG) a focused laser thermally excites magnon spins. The…
We demonstrate first measurements of successful spin generation in crystalline Co$_2$FeSi/MgO/GaAs hybrid structures grown by molecular-beam epitaxy (MBE), with different MgO interlayer thicknesses. Using non-local spin valve and non-local…
We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 k{\Omega} {\mu}m^2 has been…
We study spin-transport in bilayer-graphene (BLG), spin-orbit coupled to a tungsten di sulfide (WS$_2$) substrate, and measure a record spin lifetime anisotropy ~40-70, i.e. ratio between the out-of-plane $\tau_{\perp}$ and in-plane spin…
The discovery of new materials that efficiently transmit spin currents has been important for spintronics and material science. The electric insulator $\mathrm{Gd}_3\mathrm{Ga}_5\mathrm{O}_{12}$ (GGG) is a superior substrate for growing…
We experimentally investigate spin-polarized electron transport between two ferromagnetic contacts, placed at the edge of a two-dimensional electron system with band inversion. The system is realized in a narrow (8~nm) HgTe quantum well,…
We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our…
We have measured spin transfer-induced dynamics in magnetic nanocontact devices having a perpendicularly magnetized Co/Ni free layer and an in-plane magnetized CoFe fixed layer. The frequencies and powers of the excitations agree well with…
We use lateral spin valves with varying interface resistance to measure non-local Hanle effect in order to extract the spin-diffusion length of the non-magnetic channel. A general expression that describes spin injection and transport,…
In a recent publication, we demonstrated electrical spin injection and detection in n-type silicon at temperatures up to 500K using ferromagnetic metal / SiO2 tunnel barrier contacts in a three-terminal geometry (Nature Commun. 2:245…
Although the electrical injection, transport and detection of spins in silicon have been achieved, the induced spin accumulation was much smaller than expected and desired, limiting the potential impact of Si-based spintronic devices. Here,…
The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this…
The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in…
Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of electrically-controlled magnetic memory devices.…
During the past years there has been renewed interest in the wide-bandgap II-VI semiconductor ZnO, triggered by promising prospects for spintronic applications. First, ferromagnetism was predicted for dilute magnetic doping. In…
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…
A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detection of a modulation of spin signals from the Si as a function…
We present a study of the transport properties of thermally generated spin currents in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer over a wide range of temperature. Spin currents generated by the spin Seebeck effect…