Related papers: Charge collection properties of irradiated deplete…
In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration of high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables for instance the…
HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel…
The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses…
3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a…
The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure,…
Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge…
We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which…
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…
The ALPHA collaboration has successfully demonstrated the production and the confinement of cold antihydrogen, $\overline{\mathrm{H}}$. An analysis of trapping data allowed a stringent limit to be placed on the electric charge of the…
The MiniCactus sensors are demonstrator sensors designed in LFoundry LF15A 150 nm technology, intended to study the performance of non amplified High Voltage High Resistivity CMOS sensors for measurement of time of arrival of charged…
A measurement of the charge asymmetry in the production of top quark pairs in the semileptonic decay channel has been performed. A dataset corresponding to an integrated luminosity of 1.04 inverse femtobarn, obtained at a centre-of-mass…
A 0.93 gram $1{\times}1{\times}0.4$ cm$^3$ SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. The detector's response under a…
The ion beam induced charge technique with proton microprobe is used to characterise newly developed p-n junction large area silicon carbide detectors. They were recently produced as part of the ongoing program to develop a new particle…
A model of the Li-diffused inactive layer in P-type high purity germanium detectors is built to describe the transportation of charge carriers and calculate the charge collection efficiency therein. The model is applied to calculate charge…
Electrons floating on the surface of liquid helium are possible qubits for quantum information processing. Varying electric potentials do not modify spin states, which allows their transport on helium using a charge-coupled device…
The deep trapping gate device concept for charged particle detection was recently introduced in Saclay/IRFU. It is based on an n-MOS structure in which a buried gate, located below the n-channel, collects carriers which are generated by…
Measurement of the inclusive and differential top-quark charge asymmetry is carried out using full Run 2 data from proton-proton collisions at a center-of-mass energy of $13$ TeV collected by the ATLAS detector. The single-lepton and…
Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected…
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active…
A description of an edge-biasing experiment conducted on the SPECTOR (Spherical Compact Toroid) plasma injector is presented, along with initial results. The insertion of a disc-shaped molybdenum electrode (probe), biased at up to +100V,…