Related papers: Charge collection properties of irradiated deplete…

Plasma effect is observed in CCDs exposed to heavy ionizing alpha-particles with energies in the range 0.5 - 5.5 MeV. The results obtained for the size of the charge clusters reconstructed on the CCD pixels agrees with previous measurements…

A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The…

3D silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrating into the bulk material in contrast to standard Si detectors with planar electrodes on its top and bottom. This geometry renders…

Femtosecond core-level transient absorption spectroscopy is utilized to investigate photoinduced dynamics of the charge density wave in 1T-TiSe2 at the Ti M2,3 edge (30-50 eV). Photoexcited carriers and phonons are found to primarily induce…

Pixel detectors are used in the innermost part of the multi purpose experiments at LHC and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The…

High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. Thereby the impact of radiation…

The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already…

The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small…

Depleted p-channel field effect transistor detectors with repetitive-non-destructive readout (RNDR-DEPFETs) achieve a deep sub-electron noise by averaging several independent measurements of one single event. During the repetitive readout…

Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the…

In this work, we will present a physical model and measurements of the transport of small charge packets in the bulk of thick high resistivity CCD before being collected by the pixel potential wells. A new technique to measure the lateral…

The ATLAS experiment will undergo around the year 2025 a replacement of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) with a new 5-layer pixel system. Thin planar pixel sensors are promising candidates to…

Free floating Test Masses (TM) of inertial reference instruments accumulate charge mainly through the triboelectric effect during separation from their housings and, if in the space environment, from cosmic radiation. These charges will…

The Inner Tracking System (ITS) of the ALICE experiment at CERN will undergo an upgrade during the LHC long shutdown 3, in which the three innermost tracking layers will be replaced. This upgrade, named the Inner Tracking System 3 (ITS3),…

Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the…

We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer…

An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…

Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The…

Microchannel plate photodetectors provide both picosecond time resolution and sub-millimeter position resolution, making them attractive photosensors for particle identification detectors of a future U.S. Electron Ion Collider. We have…

Radiation damage to space-based Charge-Coupled Device (CCD) detectors creates defects which result in an increasing Charge Transfer Inefficiency (CTI) that causes spurious image trailing. Most of the trailing can be corrected during…