Related papers: Charge collection properties of irradiated deplete…
This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates.…
The traditional characterization of charge transfer inefficiency (CTI) in charge-coupled devices (CCDs) can suffer from a number of deficiencies: CTI is often only calculated for a limited number of signal levels, CTI is calculated from a…
The low gain avalanche detectors (LGADs) are thin sensors with fast charge collection which in combination with internal gain deliver an outstanding time resolution of about 30 ps. High collision rates and consequent large particle rates…
The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as…
This paper describes both an experimental methodology based on the Ion Beam Induced Charge (IBIC) technique and the relevant interpretative model, which were adopted to characterize the electronic features of power diodes. IBIC spectra were…
Cadmium zinc telluride (CdZnTe, CZT) radiation detectors are suitable for a variety of applications, due to their high spatial resolution and spectroscopic energy performance at room temperature. However, state-of-the-art detector systems…
We introduce the fully-depleted charge-coupled device (CCD) as a particle detector. We demonstrate its low energy threshold operation, capable of detecting ionizing energy depositions in a single pixel down to 50 eVee. We present results of…
Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…
Quantum cascade detectors (QCD) are unipolar infrared devices where the transport of the photo excited carriers takes place through confined electronic states, without an applied bias. In this photovoltaic mode, the detector's noise is not…
A measurement of the charge asymmetry in top-quark pair ($t\bar{t}$) production in association with a photon is presented. The measurement is performed in the single-lepton $t\bar{t}$ decay channel using proton-proton collision data…
To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the…
Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $\mu$m, produced at CiS, and 100-200 $\mu$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and…
The Fine Pixel CCD (FPCCD) is one of the candidate sensor technologies for the ILC vertex detector. The vertex detector is located near the interaction point, thus high radiation tolerance is required. Charge transfer efficiency of CCD is…
We present the results of the characterization of novel n-in-p planar pixel detectors, designed for the future upgrades of the ATLAS pixel system. N-in-p silicon devices are a promising candidate to replace the n-in-n sensors thanks to…
In this paper we describe the design, construction, and operation of a first large area double-phase liquid argon Large Electron Multiplier Time Projection Chamber (LAr LEM-TPC). The detector has a maximum drift length of 60 cm and the…
We report on the design, deployment and signal analysis for shielded button electrodes sensitive to electron cloud buildup at the Cornell Electron Storage Ring. These simple detectors, derived from a beam-position monitor electrode design,…
MALTA2 is a depleted monolithic active pixel sensor (DMAPS) designed for tracking at high rates and typically low detection threshold of $\sim150\,\mathrm{e^-}$. A precise knowledge of the threshold is crucial to understanding the charge…
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived…
The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transient current technique with sub-nanosecond focused light pulses…
Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence, detectors with fast…