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Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more…

Mesoscale and Nanoscale Physics · Physics 2020-03-10 Eduardo B. Ramirez , Francois Sfigakis , Sukanya Kudva , Jonathan Baugh

We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density…

Mesoscale and Nanoscale Physics · Physics 2016-11-23 E. T. Owen , C. H. W. Barnes

We report quantum oscillations in magnetoresistance that are periodic in magnetic field ($B$), observed at the interface between (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_3$ and SrTiO$_3$. Unlike Shubnikov-de Haas oscillations, which…

Mesoscale and Nanoscale Physics · Physics 2026-03-11 Km Rubi , Kun Han , Huang Zhen , Michel Goiran , Duncan K. Maude , Walter Escoffier , A. Ariando

The natural van der Waals heterostructure 4H$_b$-TaS$_2$ composed of alternating 1T- and 1H-TaS$_2$ layers serves as a platform for investigating the electronic correlations and layer-dependent properties of novel quantum materials. The…

Mesoscale and Nanoscale Physics · Physics 2025-10-07 R. Mathew Roy , X. Feng , M. Wenzel , V. Hasse , C. Shekhar , M. G. Vergniory , C. Felser , A. V. Pronin , M. Dressel

We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…

Mesoscale and Nanoscale Physics · Physics 2015-06-15 R. Li , F. E. Hudson , A. S. Dzurak , A. R. Hamilton

We have observed anomalous transport properties for a 50 nm Bi dot in the Coulomb-blockade regime. Over a range of gate voltages, Coulomb blockade peaks are suppressed at low bias, and dramatic structure appears in the current at higher…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 D. E. Grupp , T. Zhang , G. J. Dolan , Ned S. Wingreen

We use synchrotron x-ray diffraction and electrical transport under pressure to probe both the magnetism and the structure of single crystal NiS2 across its Mott-Hubbard transition. In the insulator, the low-temperature antiferromagnetic…

Strongly Correlated Electrons · Physics 2011-09-02 Yejun Feng , R. Jaramillo , A. Banerjee , J. M. Honig , T. F. Rosenbaum

Structural defects in 2D-transition metal dichalcogenides are critical in modulating their optical and electrical behavior. Nevertheless, precise defect control within the monolayer regime poses a significant challenge. Herein, a…

Mesoscale and Nanoscale Physics · Physics 2025-09-30 Anagha Gopinath , Faiha Mujeeb , Subhabrata Dhar , Jyoti Mohanty

The many-body wave-function of an interacting one-dimensional electron system is probed, focusing on the low-density, strong interaction regime. The properties of the wave-function are determined using tunneling between two long, clean,…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 H. Steinberg , O. M. Auslaender , A. Yacoby , J. Qian , G. A. Fiete , Y. Tserkovnyak , B. I. Halperin , K. W. Baldwin , L. N. Pfeiffer , K. W. West

We report a sequential two-step vapor deposition process for growing mixed-dimensional van der Waals (vdW) materials, specifically Te nanowires (1D) and MoS$_2$ (2D), on a single SiO$_2$ wafer. Our growth technique offers a unique potential…

Understanding quantum many-body systems is at the heart of condensed matter physics. The ability to control the underlying lattice geometry of a system, and thus its many-body interactions, would enable the realization of and transition…

Mesoscale and Nanoscale Physics · Physics 2023-08-09 Eric Anderson , Feng-Ren Fan , Jiaqi Cai , William Holtzmann , Takashi Taniguchi , Kenji Watanabe , Di Xiao , Wang Yao , Xiaodong Xu

Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 K. Lai , P. D. Ye , W. Pan , D. C. Tsui , S. A. Lyon , M. Muhlberger , F. Schaffler

Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material's electronic…

Mesoscale and Nanoscale Physics · Physics 2021-04-12 A. Seredinski , E. G. Arnault , V. Z. Costa , L. Zhao , T. F. Q. Larson , K. Watanabe , T. Taniguchi , F. Amet , A. K. M. Newaz , G. Finkelstein

Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properties in few-layer MoSe$_2$ field-effect transistors (FETs)…

Materials Science · Physics 2023-06-27 Yinjiang Shao , Jian Zhou , Ning Xu , Jian Chen , Kenji Watanabe , Takashi Taniguchi , Yi Shi , Songlin Li

Two-dimensional (2D) topological superconductors are highly desired because they not only offer opportunities for exploring novel exotic quantum physics, but also possesses potential applications in quantum computation. However, there are…

Superconductivity · Physics 2021-03-10 Jing-Yang You , Bo Gu , Gang Su , Yuan Ping Feng

We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…

Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…

It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment ($\theta=0^\circ$), associated with flat bands in the Brillouin zone of the…

A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel…

Moir\'e superlattices enable engineering of correlated quantum states through tunable periodic potentials, where twist angle controls periodicity but dynamic potential strength modulation remains challenging. Here, we develop a…

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