Moir\'e superlattices enable engineering of correlated quantum states through tunable periodic potentials, where twist angle controls periodicity but dynamic potential strength modulation remains challenging. Here, we develop a high-pressure quantum transport technique for van der Waals heterostructures, achieving the ultimate pressure limit (~9 GPa) in encapsulated moir\'e devices. In aligned graphene/h-BN, we demonstrate that pressure induces a substantial enhancement of the moir\'e potential strength, evidenced by the suppression of the first valence bandwidth and the near-doubling of the primary band gap. Moreover, we report the first observation of a tertiary gap emerging above 6.4 GPa, verifying theoretical predictions. Our results establish hydrostatic pressure as a universal parameter to reshape moir\'e band structures. By enabling quantum transport studies at previously inaccessible pressure regimes, this Letter expands the accessible parameter space for exploring correlated phases in moir\'e systems.
@article{arxiv.2507.20637,
title = {Pressure-Driven Moir\'e Potential Enhancement and Tertiary Gap Opening in Graphene/h-BN Heterostructure},
author = {Yupeng Wang and Jiaqi An and Chunhui Ye and Xiangqi Wang and Di Mai and Hongze Zhao and Yang Zhang and Chiyu Peng and Kenji Watanabe and Takashi Taniguchi and Xiaoyu Sun and Rucheng Dai and Zhongping Wang and Wei Qin and Zhenhua Qiao and Zengming Zhang},
journal= {arXiv preprint arXiv:2507.20637},
year = {2025}
}