English

Programming Correlated Magnetic States via Gate Controlled Moir\'e Geometry

Mesoscale and Nanoscale Physics 2023-08-09 v1 Strongly Correlated Electrons

Abstract

Understanding quantum many-body systems is at the heart of condensed matter physics. The ability to control the underlying lattice geometry of a system, and thus its many-body interactions, would enable the realization of and transition between emergent quantum ground states. Here, we report in-situ gate switching between honeycomb and triangular lattice geometries of an electron many-body Hamiltonian in R-stacked MoTe2 moir\'e bilayers, resulting in switchable magnetic exchange interactions. At zero electric field, we observe a correlated ferromagnetic insulator near one hole per moir\'e unit cell ({\nu}=-1), i.e., a quarter-filled honeycomb lattice, with a widely tunable Curie temperature up to 14K. Fully polarizing layer pseudospin via electric field switches the system into a half-filled triangular lattice with antiferromagnetic interactions. Further doping this layer-polarized superlattice introduces carriers into the empty layer, tuning the antiferromagnetic exchange interaction back to ferromagnetic. Our work demonstrates R-stacked MoTe2 moir\'es to be a new laboratory for engineering correlated states with nontrivial topology.

Keywords

Cite

@article{arxiv.2303.17038,
  title  = {Programming Correlated Magnetic States via Gate Controlled Moir\'e Geometry},
  author = {Eric Anderson and Feng-Ren Fan and Jiaqi Cai and William Holtzmann and Takashi Taniguchi and Kenji Watanabe and Di Xiao and Wang Yao and Xiaodong Xu},
  journal= {arXiv preprint arXiv:2303.17038},
  year   = {2023}
}

Comments

13 pages, 4 figures, plus supplementary material

R2 v1 2026-06-28T09:40:42.602Z