Related papers: Valleytronics in merging Dirac cones: All-electric…
Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and…
Mechanical deformations in $\alpha$-$\mathcal{T}_3$ lattices induce local pseudomagnetic fields of opposite directionality for different valleys. When this strain is equipped with a dynamical drive, it generates a complementary…
Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge carriers that might be exploited in new families of devices.…
Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…
Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here we show that reflection from a…
This work performs a numerical study of electron transport through the fundamental logic gate in valleytronics - a valley valve consisting of two or increasing number of valley filters. Various typical effects on the transport are…
In the presence of spin-orbit coupling (SOC), achieving both spin and valley polarized Dirac state is significant to promote the fantastic integration of Dirac physics, spintronics and valleytronics. Based on ab initio calculations, here we…
Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D…
Tunneling transport across the p-n-p junction of Weyl semimetal with tilted energy dispersion is investigated. We report that the electrons around different valleys experience opposite direction refractions at the barrier interface when the…
Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular…
Rapid progress in valleytronics and spintronics is limited by the scarcity of two-dimensional materials that simultaneously provide robust valley splitting and strong spin selectivity. Here we showed that a van der Waals heterostructure…
Propagation of an electron wave packet through a quantum point contact (QPC) defined by electrostatic gates in bilayer graphene is investigated. The gates provide a bias between the layers, in order to produce an energy gap. If the gates on…
The electron transport of different conical valleys is investigated in graphene with extended line-defects. Intriguingly, the electron with a definite incident angle can be completely modulated into one conical valley by a resonator which…
While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of…
Selective control over the emission pattern of valley-polarized excitons in monolayer transition metal dichalcogenides is crucial for developing novel valleytronic, quantum information, and optoelectronic devices. While significant progress…
The low-energy theory of the surface of the topological crystalline insulator (TCI) is characterized by four Dirac cones anisotropic into the $x$ and $y$ directions. Recent experiments have shown that the band gap can be introduced in these…
Valleytronics is a rapidly advancing field that explores the use of the valley degree of freedom in electronic systems to encode and process information. It relies on electronic states with spin valley locking, first predicted and observed…
Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons…
We test the valley-filtering capabilities of a quantum dot inscribed by locally straining an $\alpha$-$\mathcal{T}_3$ lattice. Specifically, we consider an out-of-plane Gaussian bump in the center of a four-terminal configuration and…
We propose a realizable device design for an all-electrical robust valley filter that utilizes spin protected topological interface states hosted on monolayer 2D-Xene materials with large intrinsic spin-orbit coupling. In contrast with…