Related papers: Valleytronics in merging Dirac cones: All-electric…
Here we present the theoretical clarification of possibility of eight Majorana-like modes (quasi-particles which are self-conjugate) close to the experimentally inaccessible Dirac points of a two-dimensional monolayer Dirac system. The…
A new proposal is given for designing a non-volatile, completely spin logic device, that can be reprogrammed for different functional classical logical operations. We use the concept of bias driven spin dependent circular current and…
This work investigates the feasibility of electrical valley filtering for holes in transition metal dichalcogenides. We look specifically into the scheme that utilizes a potential barrier to produce valley-dependent tunneling rates, and…
In this Letter, both the manipulation of valley-polarized currents and the optical-like behaviors of Dirac fermions are theoretically explored in polycrystalline graphene. When strain is applied, the misorientation between two graphene…
We consider a superlattice formed by tunnel-connected identical holes, periodically placed in a two-dimensional topological insulator. We study tunneling transport through helical edges of these holes and demonstrate that the band structure…
Using the valley degree of freedom as a carrier of information for storage and processing, valley polarization plays a crucial role. A variety of mechanisms for valley polarization have been proposed, among which the valley-layer coupling…
We study the polarization dependence of optical absorption for the modified Haldane model, which exhibits antichiral edge modes in presence of sample boundaries and has been argued to be realizable in transition metal dichalcogenides or…
Some semiconductors have more than one degenerate minimum of the conduction band in their band structure. These minima-known as valleys-can be used for storing and processing information, if it is possible to generate a difference in their…
The tunnel current (TC) and valley current (VC) are crucial in realizing high-speed and energy-saving in next-generation devices. This paper presents the TC and VC link in the partially overlapped graphene. Under the vertical electric…
Efficient electric manipulation of valley degrees of freedom is critical and challenging for the advancement of valley-based information science and technology. We put forth an electrical scheme, based on a two-band Dirac model, that can…
We study spin-valley and lattice-pseudo spin currents in a dual ferromagnetic-gated silicene-based junction. Silicene has buckled atomic structure which allows us to take sublattice-dependent ferromagnetism into account in the…
Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum…
We show that an $n-n^{-}-n$ junction in 2D semiconductors can flexibly realize two basic valleytronic functions, i.e. valley filter and valley source, with gate controlled switchability between the two. Upon carrier flux passing through the…
The electron's charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of freedom, valley, has also attracted tremendous research…
This article presents the implementation of on-chip iontronic circuits via small-scale integration of multiple ionic logic gates made of bi-polar polyelectrolyte diodes. These ionic circuits are analogous to solid-state electronic circuits,…
Valleytronics has been widely investigated for providing new degrees of freedom to future information coding and processing. Here, it is proposed that valley polarization can be achieved by electric field induced magnetic anisotropy (MA)…
The valley degree of freedom in 2D materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphene with different atomic or electrostatic configuration,…
Recent advances in condensed matter physics have shown that the valley degree of freedom of electrons in 2D materials with hexagonal symmetry, such as graphene, h-BN, and TMDs, can be efficiently exploited, leading to the emergent field of…
We theoretically investigate spin-valley-locked tunneling transport in a transition-metal dichalcogenide/ferromagnetic-insulator heterostructure under a perpendicular magnetic field, driven by the spin Seebeck effect. We demonstrate that…
The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin…