Related papers: Valleytronics in merging Dirac cones: All-electric…
We establish a unified, symmetry-driven framework that combines the alternating spin splitting of altermagnets with valley topology to realize and electrically interconvert helical and chiral topological phases within a single material…
Generating discernible valley contrasts and segregating valley-indexed fermions in real space within graphene poses considerable challenges due to the isotropic transport within the continuum energy range for degenerate valleys. This study…
The valley degree of freedom in layered transition-metal dichalcogenides (MX2) provides the opportunity to extend functionalities of novel spintronics and valleytronics devices. Due to spin splitting induced by spin-orbital coupling (SOC),…
Controlling excitons at the nanoscale in semiconductor materials represents a formidable challenge in the fields of quantum photonics and optoelectronics. Achieving this control holds great potential for unlocking strong exciton-exciton…
Valley-contrasting Hall transport conventionally relies on the inversion symmetry breaking in two-dimensional systems, which greatly limits the selection range of valley materials. In particular, while monolayer transition metal…
Low-energy excitations in graphene exhibit relativistic properties due to the linear dispersion relation close to the Dirac points in the first Brillouin zone. Two of the Dirac points located at opposite corners of the first Brillouin zone…
The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…
Although single-layer transition-metal dichalcogenides with novel valley functionalities are promising candidate to realize valleytronic devices, the essential understanding of valley depolarization mechanisms is still incomplete. Based on…
Valleytronics and valley photonics exploit the valley degree of freedom to encode and manipulate information. Here we show that photonic valleys can be selectively addressed in quantum optics using a simple two-level emitter, provided it is…
In monolayers of semiconducting transition metal dichalcogenides, the light helicity ($\sigma^+$ or $\sigma^-$) is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations.…
Electron shuttling is emerging as a key mechanism for enabling long-range coupling in scalable spin-qubit architectures. Bringing shuttling waveform generation into the cryostat can improve scalability, but imposes strict area and power…
Two dimensional magnetic materials are at the forefront of the next generation of spintronic devices. The possibility to interface them with other van der Waals materials such as transition metal dichalcogenides has opened new possibilities…
We investigate the plasmonic response of single- and bilayer semi-Dirac materials under the influence of a tunable parameter $\delta$ that governs topological transitions via Dirac cone generation/merging and incorporating band inversion…
Achieving a population imbalance between the two inequivalent valleys is a critical first step for any valleytronic device. A valley-polarization can be induced in biased bilayer graphene using circularly polarized light. In this paper, we…
We consider a lateral hetero-junction where the left and right leads are made of monolayer graphene and the middle region is made of a gapped tilted Dirac material (borophene or quinoid graphene) illuminated with off-resonant circularly…
We investigated the transport properties in a normal metal/ferromagnet/normal metal/superconductor junction based on semi-Dirac materials with inverted energy gap. With a scattering matrix approach, we show that the electron transport in…
A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is…
We investigate a two-electron double quantum dot with both spin and valley degrees of freedom as they occur in graphene, carbon nanotubes, or silicon, and regard the 16-dimensional space with one electron per dot as a four-qubit logic…
Electrons in two-dimensional hexagonal materials have valley degree of freedom, which can be used to encode and process quantum information. The valley-selective excitations, governed by the circularly polarised light resonant with the…
Controlled flow of spin and valley pseudospin is key to future electronics exploiting these internal degrees of freedom of carriers. Here we discover a universal possibility for generating spin and valley currents by electric bias or…