Related papers: Hyperfine-phonon spin relaxation in a single-elect…
Influence of resonant oscillating electromagnetic field on a single electron in coupled lateral quantum dots in the presence of phonon-induced relaxation and decoherence is investigated. Using symmetry arguments it is shown that spin and…
We have calculated spin relaxation rates in parabolic quantum dots due to the phonon modulation of the spin-orbit interaction in presence of an external magnetic field. Both, deformation potential and piezoelectric electron-phonon coupling…
Temperature and carrier density dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetry has been studied by using time-resolved Kerr rotation technique. The spin relaxation time is measured to be much…
We study theoretically the spin relaxation rate in quasi-one-dimensional coupled double semiconductor quantum dots. We consider InSb and GaAs-based systems in the presence of the Rashba spin-orbit interaction, which causes mixing of…
We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of…
A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…
The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be…
We investigate the spin relaxation and decoherence in a single-electron graphene quantum dot with Rashba and intrinsic spin-orbit interactions. We derive an effective spin-phonon Hamiltonian via the Schrieffer-Wolff transformation in order…
We calculate the acoustic phonon-assisted exciton spin relaxation in single self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots using an atomic empirical pseudopotential method. We show that the transition from bright to dark exciton states…
We report electronic control and measurement of an imbalance between spin-up and spin-down electrons in micron-scale open quantum dots. Spin injection and detection was achieved with quantum point contacts tuned to have spin-selective…
We study the relaxation of a single electron spin in a circular gate-tunbable quantum dot in gapped graphene. Direct coupling of the electron spin to out-of-plane phonons via the intrinsic spin-orbit coupling leads to a relaxation time T_1…
We advance spin noise spectroscopy to the ultimate limit of single spin detection. This technique enables the measurement of the spin dynamic of a single heavy hole localized in a flat (InGa)As quantum dot. Magnetic field and light…
We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped $^{28}$Si:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which…
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…
Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be…
We study theoretically the phonon-induced relaxation ($T_1$) and decoherence times ($T_2$) of singlet-triplet qubits in lateral GaAs double quantum dots (DQDs). When the DQD is biased, Pauli exclusion enables strong dephasing via two-phonon…
Nanofabricated quantum bits permit large-scale integration but usually suffer from short coherence times due to interactions with their solid-state environment. The outstanding challenge is to engineer the environment so that it minimally…
The carrier spin dynamics in a n-doped (In,Ga)As/GaAs quantum well has been studied by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 milliKelvin. These techniques give data with very…
Phonon-induced spin relaxation rates in quantum dots are studied as function of in-plane and perpendicular magnetic fields, temperature and electric field, for different dot sizes. We consider Rashba and Dresselhaus spin-orbit mixing in…
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that…