Related papers: Depletion-mode Quantum Dots in Intrinsic Silicon

We report on the observation of photoluminescence from positive, neutral and negative charge states of single semiconductor quantum dots. For this purpose we designed a structure enabling optical injection of a controlled unequal number of…

Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum…

We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5,400 is achieved by…

We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of…

Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit…

Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically…

We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are…

In this work, a quantum dot couples to two helical edge states of a 2D topological insulator through weak tunnelings is studied. We show that if the electron interactions on the edge states are repulsive, with Luttinger liquid parameter $ K…

Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double…

We employ density functional theory to calculate the self consistent electronic structure, free energy and linear source-drain conductance of a lateral semiconductor quantum dot patterned via surface gates on the 2DEG formed at the…

A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…

We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show…

We propose a novel scheme of solid state realization of a quantum computer based on single spin "enhancement mode" quantum dots as building blocks. In the enhancement quantum dots, just one electron can be brought into initially empty dot,…

Tunnel-coupled pairs of optically active quantum dots - quantum dot molecules (QDMs) - offer the possibility to combine excellent optical properties such as strong light-matter coupling with two-spin singlet-triplet ($S-T_0$) qubits having…

Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states…

Using time-resolved transconductance spectroscopy, we study the tunneling dynamics between a two-dimensional electron gas (2DEG) and self-assembled quantum dots (QDs), embedded in a field-effect transistor structure. We find that the…

We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of…

We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and…

The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect gap material, and InAs and CdSe as examples of typical III-V and II-VI…

We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner…