Related papers: Depletion-mode Quantum Dots in Intrinsic Silicon
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability…
We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of…
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe…
InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and…
We present here a theory and a computational tool, Silicon-{\sc Qnano}, to describe atomic scale quantum dots in Silicon. The methodology is applied to model dangling bond quantum dots (DBQDs) created on a passivated H:Si-(100)-(2$\times$1)…
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study…
Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double- and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for…
Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in developing robust two qubit logic gates in…
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…
We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by…
We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary…
Present proposals for the realisation of entangled photon pair sources using the radiative decay of the biexciton in semiconductor quantum dots are limited by the need to enforce degeneracy of the two intermediate, single exciton states. We…
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon…
Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance towards fault-tolerant implementations, but it poses substantial…
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties…
We discuss decoherence in charge qubits formed by multiple lateral quantum dots in the framework of the spin-boson model and the Born-Markov approximation. We consider the intrinsic decoherence caused by the coupling to bulk phonon modes.…
We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the…
Nanoelectronic quantum dot devices exploiting the charge-Kondo paradigm have been established as versatile and accurate analog quantum simulators of fundamental quantum impurity models. In particular, hybrid metal-semiconductor dots…