Related papers: 229 nm UV LEDs using p-type silicon for increased …
We show the first demonstration of a hybrid external cavity diode laser (ECDL) using aluminum nitride (AlN) as the wave-guiding material. Two devices are presented, a near-infrared (NIR) laser using a 850 nm diode and a red laser using a…
Precise control over the potential of an electrically isolated proof mass is necessary for the operation of devices such as a Gravitational Reference Sensor (GRS) and satellite missions such as LISA. We show that AlGaN UV LEDs operating at…
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve…
Non-doped white organic light-emitting diodes using an ultrathin yellow-emitting layer of rubrene (5,6,11,12-tetraphenylnaphtacene) inserted on either side of the interface between a hole-transporting NPB…
We demonstrate the first optically pumped sub-300 nm UV laser structures grown by plasma-assisted molecular beam epitaxy on single-crystal bulk AlN. The edge-emitting laser structures fabricated with the AlN/AlGaN heterostructures exhibit…
Deep-UV ~ 250 nm (4.96 eV) tilted in-situ co-illumination of the sample under imaging by scanning electron microscope (SEM) is developed at a robust and practical instrument level. Precise mechanical control of the lateral position and tilt…
Near-field thermal radiation transfer overcoming the far-field blackbody limit has attracted significant attention in recent years owing to its potential for drastically increasing the output power and conversion efficiency of…
We demonstrate a high-power narrow-linewidth ultraviolet (UV) laser system at 318.6 nm for direct 6S1/2-nP (n = 70 to 100) Rydberg excitation of cesium atoms. Based on commercial fiber lasers and efficient nonlinear frequency conversion…
We report on the development of InP-based semiconductor amplifiers with a U-bend waveguide geometry having the input and output ports on one facet only. This waveguide geometry simplifies the chip alignment during the hybrid integration on…
To achieve a high-density electron-hole plasma in group-III nitrides for efficient light emission, we propose a planar two-dimensional (2D) p-i-n structure that can be created in selectively-doped superlattices and quantum wells. The 2D…
Short wavelength ultraviolet (UV-C) light deactivates DNA of any germs, including multiresistive bacteria and viruses like COVID-19. Two-dimensional (2D) material-based UV-C light emitting diodes can potentially be integrated into arbitrary…
Large reflection losses at interfaces in light emitting semiconductor devices cause a significant reduction in their light emission and energy efficiencies. Metal nanoparticle (NP) surface coatings have been demonstrated to increase the…
Recent advances in LED technology have allowed the development of high-brightness deep-UV LEDs with potential applications in water purification, gas sensing and as excitation sources in fluorescence microscopy. The emission pattern of an…
Cubic InGaN/GaN multi quantum wells (MQWs) with high structural and optical quality are achieved by utilizing free-standing 3C-SiC (001) substrates and optimizing InGaN quantum well growth. Superlattice peaks up to 5th order are clearly…
Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically…
Mode-locked lasers are of interest for applications such as biological imaging, non-linear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of…
A near-band-edge bluish electroluminescence (EL) band centered at around 440 nm was observed from ZnO p-i-n homojunction diodes through a semi-transparent electrode deposited on the p-type ZnO top layer. The EL peak energy coincided with…
W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $\mu$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs).…
Tunnel-injection lasers promise advantages in modulation bandwidth and temperature stability in comparison to conventional laser designs. In this paper, we present results of a microscopic theory for laser properties of tunnel-injection…
We report on multilayer high efficiency antireflection coating (ARC) design and development for use at UV wavelengths on CCDs and other Si-based detectors. We have previously demonstrated a set of single-layer coatings, which achieve >50%…