Related papers: 229 nm UV LEDs using p-type silicon for increased …
Periodically poled lithium niobate (PPLN) waveguide is a powerful platform for efficient wavelength conversion. Conventional PPLN converters however typically require long device lengths and high pump powers due to the limited nonlinear…
We propose to generate continuous-wave vacuum ultraviolet (VUV) laser light at 148.4 nm using four-wave mixing in cadmium vapor for precision spectroscopy of the Th-229 isomer transition. Due to the large transition matrix elements of…
Augmented Reality (AR) and Virtual Reality (VR), require miniaturized displays with ultrahigh pixel densities. Here, we demonstrate an individually addressable subwavelength OLED pixel based on a nanoscale electrode capable of supporting…
One dimensional nanobeam photonic crystal cavities are fabricated in silicon dioxide with silicon nanocrystals. Quality factors of over 9 x 10^3 are found in experiment, matching theoretical predictions, with mode volumes of 1.5(lambda/n)^3…
In this study, we present a complex investigation for miniaturizing of perovskite photodiodes (PPDs) in various geometries with use of ultraviolet laser scribing (UV-LS). Employing a 355 nm (3.5 eV) pulsed laser at 30 kHz, we successfully…
Advances in silicon (Si) photonics at submicrometer wavelengths are unlocking new opportunities to realize miniaturized, scalable optical systems for biophotonics, quantum information, imaging, spectroscopy, and displays. Addressing this…
High-efficiency micro-light-emitting diodes (Micro-LEDs) are key devices for next-generation display technology. However, when the mesa size is reduced to around tens of micrometers or less, the luminous efficiency is constrained by the…
We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit…
InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer…
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated…
Electrical properties of contact to p-type nitride semiconductor devices, based on gallium nitride were simulated by ab initio and by drift-diffusion calculations. The contact electric properties are shown to be dominated by electron…
Harvesting non-equilibrium hot carriers from photo-excited metal nanoparticles has enabled plasmon-driven photochemical transformations and tunable photodetection with resonant nanoantennas. Despite numerous studies on the ultrafast…
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport…
We developed an injection-locked Ti:sapphire laser at a wavelength of 671 nm where the fluorescence gain of the Ti:sapphire crystal is quite low. We obtained an output of more than 500 mW at a pump power of 10 W. The injection-locked lasing…
Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for…
Surface plasmonic effects of metallic particles have been known to be an effective method to improve the performance light emitting didoes. In this work, we reported the sputtered Au nanoparticles enhanced electroluminescence in inverted…
Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency $f_{\text{NIR}}$ into quantum wells driven by a ~10 kV/cm field oscillating at $f_{\text{THz}} = 0.57$ THz. At $T=12$ K, up to 18…
Integrated optical devices able to control light matter interactions on the nanoscale have attracted the attention of the scientific community in recent years. However, most of these devices are based on silicon waveguides, limiting their…
Angle-independent, narrowband emission is required for many optoelectronic devices, ranging from high-definition displays to sensors. However, emerging materials for electroluminescent devices, such as organics and perovskites, show…
We experimentally investigate and analyze the electrical and optical characteristics of GaAs-based conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction. It was found that TJ LD show a…