Related papers: 229 nm UV LEDs using p-type silicon for increased …
In this work, we study the absorption properties of AlN in the range of 1.5 - 5.5 eV, as well as the meta-stable change in absorption induced by ultraviolet (UV) irradiation (photochromism), and the restoration of the initial state under…
An epitaxial heterojunction made of a p-type perovskite manganite La0.8Sr0.2MnO3 film and an n-type strontium titanate SrTiO3:Nb substrate has been fabricated by the pulsed laser deposition technique. The I - V characteristics and…
Absolute values of VUV-emission of a 2.45 GHz microwave-driven hydrogen discharge are reported. The measurements were performed with a robust and straightforward method based on a photodiode and optical filters. It was found that the…
Recent technical and commercial successes of existing thin film solar cell technologies motivates exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds like CuSbSe$_2$, which do…
Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effects are overcome and thermal effects are suppressed, which is highly beneficial for increasing the dynamic range of various microwave photonic…
We report reproducible fabrication of InP-InAsP nanowire light emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the…
Photonic addressing of superconducting circuits has been proposed to overcome wiring complexity and heat load challenges, but superconducting-photonic links suffer from an efficiency-noise trade-off that limits scalability. This trade-off…
A key component for optical on-chip communication is an efficient light source. However, to enable low energy per bit communication and local integration with Si CMOS, devices need to be further scaled down. In this work, we fabricate…
High-power lasers with narrow linewidth and high beam quality in the visible spectrum are essential for emerging quantum and space technologies. Here we report significant advances in diamond Raman lasers, generating diffraction-limited…
Nanophotonic objects like plasmonic nanoparticles and colloidal quantum dots can complement the functionality of molecular dyes in biomedical optics. However, their operation is usually governed by spontaneous processes, which results in…
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study…
The photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate are measured. The electron density is controlled from 1 X 10^{9} cm^{-2} to 2.5 X 10^{11}…
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase…
The integration density of photonic integrated circuits has been limited by light coupling between waveguides. Traditional approaches to layout the waveguide with high density are based on refractive index engineering to suppress the light…
Lanthanide-based upconversion nanoparticles (UCNPs) generally require high power laser excitation. Here we report wide-field upconversion microscopy at single-nanoparticle sensitivity using incoherent excitation of a 970-nm light-emitting…
This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By…
We generate 555.8nm light with sub-MHz linewidth through the use of laser injection-locking of a semiconductor diode at 1111.6nm, followed by frequency doubling in a resonant cavity. The integrity of the injection lock is investigated by…
We investigate the triggering and guiding of DC high-voltage discharges over a distance of 37 cm by filaments produced by ultraviolet (266 nm) laser pulses of 200 ps duration. The latter reduce the breakdown electric field by half and allow…
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and…
The Persistent Photoconductivity (PPC) effect was studied in individual tin oxide (SnO2) nanobelts as a function of temperature, in air, helium, and vacuum atmospheres, and low temperature Photoluminescence measurements were carried out to…