Related papers: 229 nm UV LEDs using p-type silicon for increased …

We demonstrate an injection-locked 399 nm laser system with up to 1 W output power and a locked power fraction of 0.57. The system consists of a high power, multimode diode laser that is seeded by 5 mW from a single-mode external cavity…

Ultraviolet-C light-emitting diodes (UVC-LEDs) have great application in pathogen inactivation under various kinds of situations, especially in the fight against the COVID-19. Unfortunately, its epitaxial wafers are so far limited to 2-inch…

Optical and thermal effects in asymmetric supercapacitors, whose active-carbon (AC) electrodes were embedded with nano-Si (n-Si) quantum dots (QD), are reported. We describe two structures: (1) p-n like, obtained by using a polyethylimine…

The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically…

Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and…

Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high…

We present two compact ultrafast electron injector designs with integrated focusing that provide high peak brightness of up to $1.9*10^{12} A/m^2Sr^2$ with 10s of electrons per laser pulse using silicon carbide electrodes and silicon…

For photon-counting applications at ultraviolet wavelengths, there are currently no detectors that combine high efficiency (> 50%), sub-nanosecond timing resolution, and sub-Hz dark count rates. Superconducting nanowire single-photon…

Light emitting diodes (LEDs) in the deep ultra-violet (DUV) offer new perspectives for multiple applications ranging from 3D printing to sterilization. However, insufficient light extraction severely limits their efficiency. Nanostructured…

We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the…

We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor technology. The micro-holes help to enhance the optical…

On-chip ultraviolet sources are of great interest for building compact and scalable atomic clocks, quantum computers, and spectrometers; however, few material platforms are suitable for integrated ultraviolet light generation. Of these…

We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device…

Systematic ensemble photoluminescence studies have been performed on type-I InP-quantum dots in Al0.20Ga0.80InP barriers, emitting at approximately 1.85 eV at 5 K. The influence of different barrier configurations as well as the…

Due to the pivotal role of UV photodiodes in many technological applications in tandem with the high efficiency achieved by machine learning techniques in regression and classification problems, different artificial intelligence techniques…

Light-emitting diodes (LEDs) based on III-V/II-VI materials have delivered a compelling performance in the mid-infrared (mid-IR) region, which enabled wide-ranging applications, including environmental monitoring, defense and medical…

Efficient electroluminescence of silicon light emitting p-n diodes with different sizes and shapes is investigated at room temperature. High quantum efficiency of the diodes, a long linear dependence of the electroluminescence intensity on…

The recent breakthroughs in laser-driving 229Th nuclear transition have created an urgent demand for coherent vacuum-ultraviolet (VUV) sources delivering high spectral brightness at the critical 148.38 nm isomer energy. However, generating…

We investigate and evaluate the contribution of the ultraviolet radiation spectrum on the temperature and efficiency of commercial crystalline silicon-based photovoltaics (PVs) that operate outdoors. The investigation is performed by…

We report a systematic study of p-type polarization induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy. The composition gradient in the p-type base is varied in a…