Related papers: 229 nm UV LEDs using p-type silicon for increased …

Development of low-loss photonic components in the ultraviolet (UV) band will open new prospects for classical and quantum optics. Compared with other integrated platforms, aluminum nitride (AlN) is particularly attractive as it features an…

Efficiency droop, i.e., a decline in brightness of LEDs at high electrical currents, has limited the performance of all commercially available LEDs. Until now, it has limited the output power of sub-micron LEDs and lasers to nanowatt range.…

Silicon's inherently indirect bandgap severely limits its radiative efficiency, posing a fundamental challenge to the development of practical silicon-based light sources. While strategies such as nanoscale confinement of electrons and…

Longer wavelength emitters such as green LEDs display a pronounced efficiency drop at higher current densities, resulting in relatively low wall-plug efficiency. Multi-active region approach can improve the wall-plug efficiency…

The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…

In this paper, we present an envelope function analysis in order to design the emission spectra of a white quantum well light emitting diode. The nanometric heterostructure that we are dealing with is a multiple quantum well, consisting…

Integrated coherent sources of ultra-violet (UV) light are essential for a wide range of applications, from ion-based quantum computing and optical clocks to gas sensing and microscopy. Conventional approaches that rely on UV gain materials…

Light-emitting diodes based on perovskite nanocrystals (PNCs-LEDs) have gained great interest for next-generation display and lighting technologies prized for their color purity, high brightness and luminous efficiency approaching the…

V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and also enhance the hole lateral injection through sidewall of…

Ultraviolet and visible radiation is observed from the contacts of a scanning tunneling microscope with Si(100) and (111) wafers. This luminescence relies on the presence of hot electrons in silicon, which are supplied, at positive bias on…

The unique anisotropic properties of colloidal quantum wells (CQWs) make them highly promising as components in nanocrystal-based devices. However, the limited performance of green and blue light-emitting diodes (LEDs) based on CQWs has…

Polarisation doping of Al$_x$Ga$_{1-x}$N, through grading of $x$, has realised major improvements in $p$-type conductivity in ultraviolet (UV) light-emitting diodes (LEDs) compared to conventional impurity doping. However, the exact balance…

Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and…

Aluminum Indium Nitride (AlInN) alloys offer great potential for photovoltaic devices thanks to their wide direct bandgap energy that covers the solar spectrum from 0.7 eV (InN) to 6.2 eV (AlN), and their superior resistance to high…

We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface…

Localized surface plasmons (LSPs) have played a significant role in improving the light emission efficiency of light emitting diodes (LEDs). In this report, polygonal nanoholes have been fabricated in the p-GaN layer of InGaN-based LEDs by…

Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley…

Unbalanced charge injection is deleterious for the performance of colloidal quantum dot (CQD) light emitting diodes (LEDs) as it deteriorates the quantum efficiency (QE), brightness and operational lifetime. CQD LEDs emitting in the…

In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowires for application in electron-pumped ultraviolet sources.…

Generating visible light with wide tunability and high coherence based on photonic integrated circuits is of high interest for applications in biophotonics, precision metrology and quantum technology. Here we present the first demonstration…