Localized surface plasmon enhanced InGaN-based light-emitting diodes with polygonal Au/Al nanoparticles
Abstract
Localized surface plasmons (LSPs) have played a significant role in improving the light emission efficiency of light emitting diodes (LEDs). In this report, polygonal nanoholes have been fabricated in the p-GaN layer of InGaN-based LEDs by using Ni nanoporous film as the etching mask, and then Au/Al metal nanoparticles are embedded in the nanoholes to form the LSP structure. The coupling between the LSP and the LED has been clearly observed. The results show that the light output of the LEDs has been increased by 46% at higher current injection condition, and together with a shift of the gain peak position to the LSP peak resonance energy. As the coupling distance is decreased from 60 nm to 30 nm, the maximum enhancement factor increases to 2.38. The above results indicate that the LSP from the polygonal metal nanoparticles is a kind of very promising structure to enhance the lighting performance of the InGaN-based LEDs.
Keywords
Cite
@article{arxiv.2104.00849,
title = {Localized surface plasmon enhanced InGaN-based light-emitting diodes with polygonal Au/Al nanoparticles},
author = {Xiaokang Mao and Zhiguo Yu and Peng Che and Jing Zhou and Yuyin Li and Jianbo Feng and Zili Xie and Hong Zhao and Dunjun Chen and Xiangqian Xiu and Ke Wang and Yi Shi and Rong Zhang and Youdou Zheng},
journal= {arXiv preprint arXiv:2104.00849},
year = {2021}
}
Comments
7 pages, 5 figures. This work has ever been successfully submitted to Crystals for possible publication in Feb. 2021, and the manuscript ID is crystals-1129650