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Related papers: Native interstitial defects in ZnGeN$_2$

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Thermodynamics and kinetics of Li, Na, and Mg storage in Ge is studied ab initio. The most stable configurations can consist of tetrahedral, substitutional, or a combination of the two types of sites. In the dilute limit, Li, Na prefer…

Materials Science · Physics 2017-05-08 Fleur Legrain , Sergei Manzhos

Ga interstitials in GaAs ($I_{Ga}$) are studied using the local-orbital {ab-initio} code SIESTA in a supercell of {216+1} atoms. Starting from eight different initial configurations, we find five metastable structures: the two tetrahedral…

Materials Science · Physics 2009-11-13 Marc-André Malouin , Fedwa El-Mellouhi , Normand Mousseau

In this work an overall electronic structure including the position and formation energies of various intrinsic defects are computed for anatase using Density Functional Theory aided by Hubbard correction (DFT+U). The intrinsic point…

The electronic properties of hydrogenated, spherical, Si/Ge and Ge/Si core-shell nanocrystals with a diameter ranging from 1.8 to 4.0 nm are studied within Density Functional Theory. Effects induced by quantum confinement and strain on the…

Materials Science · Physics 2022-06-23 Ivan Marri , Stefano Ossicini , Michele Amato , Simone Grillo , Olivia Pulci

Investigations on II-Sn-N2 (II = Mg, Ca) have been started very recently compared to the intense research of the Zn-IV-N2 (IV = Si, Ge, Sn). In this work, we perform a comprehensive study of cation disorder in stoichiometric MgSnN2 and…

Materials Science · Physics 2021-10-28 Dan Han , Stefan S. Rudel , Wolfgang Schnick , Hubert Ebert

Achieving efficient n-type doping in AlN, a representative ultrawide bandgap (UWBG) semiconductor, remains a longstanding challenge that limits its application in high-power electronics and deep-ultraviolet optoelectronics. Conventional…

Materials Science · Physics 2025-12-04 Yujie Liu , Sieun Chae , Emmanouil Kioupakis

By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of topological insulator (TI) state, though…

The native point defects are studied in LiGaO2 using hybrid functional calculations. We find that the relative energy of formation of the cation vacancies and the cation antisite defects depends strongly on the chemical potential…

Materials Science · Physics 2020-01-08 Adisak Boonchun , Klichchupong Dabsamut , Walter R. L. Lambrecht

The electronic structures of Mn-doped zincblende GaAs and wurtzite GaN are calculated using both standard local-density functional theory (LSDA), and a novel pseudopotential self-interaction-corrected approach (pseudo-SIC), able to account…

Mesoscale and Nanoscale Physics · Physics 2025-06-10 Alessio Filippetti , Nicola A. Spaldin , Stefano Sanvito

Mechanical properties, atomic and energy band structures of bare and hydrogen passivated Si$_{n}$Ge$_{n}$ nanowire superlattices have been investigated by using first-principles pseudopotential plane wave method. Undoped, tetrahedral Si and…

Mesoscale and Nanoscale Physics · Physics 2010-12-16 Nurten Akman , Engin Durgun , Seymur Cahangirov , Salim Ciraci

Recently the point defect responsible for the intra-3$d$ luminescence of cobalt in doped ZnO samples has been indentified\,\cite{pssb2019}. In this work we further extend our investigation to other point defects in Co-doped ZnO. We use…

Materials Science · Physics 2020-06-24 Dennis Franke , Michael Lorke , Thomas Frauenheim , A. L. da Rosa

GaSb:N displays promise towards realization of optoelectronic devices accessing the mid-infrared wavelength regime. Theoretical and experimental results on its electronic and optical properties are however few. To address this, we present a…

Materials Science · Physics 2014-03-06 Priyamvada Jadaun , Hari P. Nair , Vincenzo Lordi , Seth R. Bank , Sanjay K. Banerjee

The structural and electronic properties of cubic GaN are studied within the local density approximation by the full-potential linear muffin-tin orbitals method. The Ga $3d$ electrons are treated as band states, and no shape approximation…

Condensed Matter · Physics 2009-10-22 Vincenzo Fiorentini , Michael Methfessel , Matthias Scheffler

We present density-functional-theory calculations which provide a microscopic picture of the recombination-enhanced migration of interstitial Mg in GaN. We determine stable structures and migration pathways with accurate HSE approximation…

Materials Science · Physics 2025-10-27 Yuansheng Zhao , Kenji Shiraishi , Tetsuo Narita , Atsushi Oshiyama

This work examines the carbon defects associated with recently reported and novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon ($^{12}C$) doping in the range of concentrations from $3.2*10^{17}$…

Materials Science · Physics 2022-12-14 I. Gamov , J. L. Lyons , G. Gärtner , K. Irmscher , E. Richter , M. Weyers , M. R. Wagner , M. Bickermann

Hexagonal SiGe is a promising material for combining electronic and photonic technologies. In this work, the energetic, structural, elastic and electronic properties of the hexagonal polytypes (2$H$, 4$H$ and 6$H$) of silicon and germanium…

InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that…

We carried out a comprehensive study of the electronic, magnetic, and thermodynamic properties of Ni-doped ZrTe$_2$. High quality Ni$_{0.04}$ZrTe$_{1.89}$ single crystals show a possible coexistence of charge density waves (CDW,…

Embedded Si and Ge nanocrystals (NCs) in wide band-gap matrices are studied theoretically using an atomistic pseudopotential approach. From small clusters to large NCs containing on the order of several thousand atoms are considered.…

Materials Science · Physics 2007-11-27 C. Bulutay

In Fe-based superconductors, electron doping is often realized by the substitution of transition-metal atoms for Fe. In order to investigate how the electronic structure of the parent compound is influenced by Zn substitution, which…

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