Related papers: Native interstitial defects in ZnGeN$_2$
Impurity levels and formation energies of acceptors in wurtzite GaN are predicted ab initio. Be_Ga is found to be the shallow (thermal ionization energy $\sim$ 0.06 eV); $Mg_{Ga}$ and $Zn_{Ga}$ are mid-deep acceptors (0.23 eV and 0.33 eV…
The local electronic states around a single As (Te, Se) vacancy are investigated in order to shed light on the role of ligands in a series of iron-based superconductors. Such a vacancy can produce a local hopping correction ranging from…
To understand the origin of the nodal gap structure realized in BaFe$_2$(As,P)$_2$, we study the three-dimensional gap structure based on the three-dimensional ten-orbital Hubbard model with quadrupole interaction. In this model, strong…
We use neutron scattering to study the electron-doped superconducting NaFe$_{0.985}$Co$_{0.015}$As ($T_c=14$ K), which has co-existing static antiferromagnetic (AF) order ($T_N=31$ K) and exhibits two neutron spin resonances ($E_{r1}\approx…
The role of substantial in-plane disorder (Zn) on the transport and AC susceptibility of Y1-xCaxBa2(Cu1-yZny)3O7-delta was investigated over a wide range of planar hole concentration, p. Resistivity, r(T), for a number of overdoped to…
Electronic structure properties of nanowires (NW) with diameters of 1.5 nm and 3 nm based on semimetallic $\alpha$-Sn are investigated by employing density functional theory and perturbative $GW$ methods. We explore the dependence of…
Achieving efficient and stable ultraviolet emission is a challenging goal in optoelectronic devices. Herein, we investigate the UV luminescence of zinc germanate Zn2GeO4 microwires by means of photoluminescence measurements as a function of…
We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is…
The pseudogap phenomenology is one of the enigmas of the physics of high-Tc superconductors. Many members of the cuprate family have now been characterized with high resolution in both real and momentum space, which revealed highly…
The brownmillerite-type barium indate (Ba$_2$In$_2$O$_5$) is a potential electrolyte for mixed ionic-electronic conduction in solid oxide fuel cells. Revealing the defect chemistry of this material is key to understanding its ionic and…
Thanks to its high refractive index contrast, band gap and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet…
The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via epitaxial matching to II-IV nitride materials that have…
Several experimental studies have referred to the grain boundary (GB) defect as the origin of the ferromagnetism in ZnO. However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and…
ZnGeN$_2$ offers a low-cost alternative to InGaN with the potential for bandgap tuning to span the green gap using cation site ordering. The addition of oxygen on the anion site creates an additional degree of electronic tunability. Here,…
Although the two-dimensional electron gas (2DEG) in (001) Zn$_{1-x}$Mg$_x$O/ZnO heterostructures has been discovered for about twenty years, the origin of the 2DEG is still inconclusive. In the present letter, the formation mechanisms of…
We report density-functional-theory calculations of the electronic band structures and optical absorption spectra of two-dimensional crystals of Ga$_2$X$_2$ (X=S, Se, and Te). Our calculations show that all three two-dimensional materials…
Novel imaging methods show that the mobile dopants in optimum doped La$_2$CuO$_{4+y}$ (LCO) get self-organized, instead of randomly distributed. Rigid-band models fail because of ordering of dopants and supercell calculations are required…
The transport of holes through p-doped wurtzite bulk GaN and AlGaN is poor so transport of holes through GaN/AlGaN superlattices has been proposed and investigated theoretically and experimentally with experimental results showing poor…
Using an ab-initio molecular dynamics scheme (the Fireball scheme), we determined the equilibrium structure of intermediate size Si_nGe_m (n+m=71) nanoclusters with/without hydrogen passivation on the surface. Due to the strong surface…
Convergence of density-functional supercell calculations for defect formation energies, charge transition levels, localized defect state properties, and defect atomic structure and relaxation is investigated using the arsenic split…