Related papers: Field effect induced mesoscopic devices in deplete…
The high-frequency conductivity of Si delta-doped GaAs/AlGaAs heterostructures is studied in the integer quantum Hall effect (QHE) regime, using acoustic methods. Both the real and the imaginary parts of the complex conductivity are…
High-index dielectric nanostructures have recently become prominent forefront alternatives for manipulating light at the nanoscale. Their electric and magnetic resonances with intriguing characteristics endow them with a unique ability to…
The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very…
The electronic properties of quasi two-dimensional multicomponent systems are investigated in the presence of a perpendicular magnetic field. The effects of the presence of a few valence band holes on the properties of quantum Hall systems…
Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate…
A compact analytical model is developed for the mobile charge density of polar multiple channel field effect transistors. Two dimensional electron and hole gases can be potentially induced by spontaneous and piezoelectric polarization in…
Photo-generated charge in thick, back-illuminated, fully-depleted CCDs is transported by electric fields from the silicon substrate to the collecting well at the front gate of the CCDs. However, electric fields transverse to the surface of…
In this study, we present our experimental investigation on the magnetotransport properties of a two-dimensional electron system in GaAs quantum wells utilizing a variety of device geometries, including obstacles with thin barriers and…
We experimentally study quantized conductance in an electrostatically defined constriction in a high-mobility InAs two-dimensional electron gas. A parallel magnetic field lifts the spin degeneracy and allows for the observation of plateaus…
We examine the effect of the magnetic field on the proximity effect in nanostructures, self consistently using the Bogoliubov-deGennes formalism within the two dimensional extended Hubbard model. We calculate the local density of states and…
Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device…
Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a…
We report on the field-effect modulation of the charge-density-wave quantum condensate in the top-gated heterostructure devices implemented with quasi-one-dimensional NbS$_3$ nanowire channels and quasi-two-dimensional h-BN gate dielectric…
In modern GaAs/Al$_x$Ga$_{1-x}$As heterostructures with record high mobilities, a two-dimensional electron gas (2DEG) in a quantum well is provided by two remote donor $\delta$-layers placed on both sides of the well. Each $\delta$-layer is…
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…
We present a model for microwave photoconductivity in two-dimensional electron systems (2DESs) in a magnetic field at the microwave frequencies lower that the electron cyclotron frequency when the intra-Landau level (LL) transitions…
The surface bound electronic states of three-dimensional topological insulators, as well as the edge states in two-dimensional topological insulators, are investigated in the presence of a circularly polarized light. The strong coupling…
The effect of homogeneous electric field on the energy spectrum, wave functions of electron and oscillator strengths of intra-band quantum transitions in a double cylindrical quantum ring (GaAs/Al$_{x}$Ga$_{1-x}$As) is studied within the…
Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAs/AlGaAs heterojunction overgrown on top of an ex-situ cleaved substrate corner. The resulting…
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…