Related papers: Transient Nature of Negative Capacitance in Ferroe…
We report on fabrication and characterization of field effect transistors (FETs) on single-crystal pentacene. These FETs exhibit hole conductivity with room temperature effective mobility up to 0.30 cm2/Vs and on/off ratios up to 5*10^6. A…
High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…
We present first-principles calculations on electron transport through Na nanowires at finite bias voltages. The nanowire exhibits a nonlinear current-voltage characteristic and negative differential conductance. The latter is explained by…
Fluctuation effects in underdoped cuprates under high fields are examined by trying to fit theoretical results to resistivity and Nernst data in vortex states. The superconducting (SC) fluctuation in underdoped cuprates includes not only…
In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…
In this letter, the transient behavior of a ferroelectric (FE) metal-oxide-semiconductor (MOS) capacitor is theoretically investigated with a series resistor. It is shown that compared to a conventional high-k dielectric MOS capacitor, a…
Local phase transition from ferromagnetic to paramagnetic state in the region of the ballistic Ni nanocontacts (NCs) has been experimentally observed. We found that contact size reduction leads to an increase in the bias voltage at which…
A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the…
The theory of current transport in a narrow superconducting channel accounting for thermal fluctuations is revisited. The value of voltage appearing in the sample is found as the function of temperature (close to transition temperature…
Spin field effect transistors (SpinFET) are an iconic class of spintronic devices that exploit gate tuned spin-orbit interaction in semiconductor channels interposed between ferromagnetic source and drain contacts to elicit transistor…
In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching…
We investigated the electrical properties of the liquid crystal compound, known as an RM734, exhibiting a ferroelectric nematic phase. The influence of alternating (AC) and direct (DC) current electric fields on the switching process of the…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…
Copper phthalocyanine (Cu-Pc) single crystals were grown by physical vapor transport and field effect transistors (FETs) on the surface of these crystals were prepared. These FETs function as p-channel accumulation-mode devices. Charge…
We construct a comprehensive theory of the electrodynamic response of ferroelectric ultra-thin films containing periodic domain textures (PDT) with 180{\deg} polarization-oriented domains. The focal point of the theory is the…
We revise the possibility of having an amplified surface potential in ferroelectric field-effect transistors pointed out by [S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008)]. We show that the negative-capacitance regime that allows for…
The many-body ground state of a two-dimensional electron system can be tuned by Coulomb engineering through control of the dielectric environment. However, in conventional dielectrics the static permittivity is restricted to positive…
Electronic transport properties of carbon nanotubes are studied theoretically in the presence of external electric field E(t) by using the Boltzmann's transport with constant relaxation time. An analytical expression for the current…
Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…