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We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier…

Mesoscale and Nanoscale Physics · Physics 2011-05-03 Mathieu Pierre , Benoît Roche , Romain Wacquez , Xavier Jehl , Marc Sanquer , Maud Vinet

We present an idealized model involving interacting quantum dots that can support both the dynamical and geometrical forms of quantum computation. We show that by employing a structure similar to the one used in the Aharonov-Bohm effect we…

Quantum Physics · Physics 2009-11-10 Jiannis K. Pachos , Vlatko Vedral

Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion…

We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an…

We report the realization of nanotube-based quantum dot structures that use local electrostatic gating to produce individually controllable dots in series along a nanotube. Electrostatic top-gates produce depletion regions in the underlying…

Mesoscale and Nanoscale Physics · Physics 2015-06-25 M. J. Biercuk , S. Garaj , N. Mason , J. M. Chow , C. M. Marcus

The scaling up of electron spin qubit based nanocircuits has remained challenging up to date and involves the development of efficient charge control strategies. Here we report on the experimental realization of a linear triple quantum dot…

We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich…

Mesoscale and Nanoscale Physics · Physics 2011-07-28 T. M. Lu , N. C. Bishop , T. Pluym , J. Means , P. G. Kotula , J. Cederberg , L. A. Tracy , J. Dominguez , M. P. Lilly , M. S. Carroll

Quantum computers require precise control over parameters and careful engineering of the underlying physical system. In contrast, neural networks have evolved to tolerate imprecision and inhomogeneity. Here, using a reservoir computing…

Quantum Physics · Physics 2021-12-13 Sanjib Ghosh , Tanjung Krisnanda , Tomasz Paterek , Timothy C. H. Liew

We show that two electrons confined in a square semiconductor quantum dot have two isolated low-lying energy eigenstates, which have the potential to form the basis of scalable computing elements (qubits). Initialisation, one-qubit and…

Quantum Physics · Physics 2009-11-07 J. H. Jefferson , M. Fearn , D. L. J. Tipton , T. P. Spiller

A semiconductor quintuple quantum dot with two charge sensors and an additional contact to the center dot from an electron reservoir is fabricated to demonstrate the concept of scalable architecture. This design enables formation of the…

Surface-gated quantum dots (QDs) in semiconductor heterostructures represent a highly attractive platform for quantum computation and simulation. However, in this implementation, the barriers through which the QD is tunnel-coupled to source…

We propose a quantum computer architecture involving substitutional donors in photonic-crystal silicon cavities and the optical initialization, manipulation, and detection processes already demonstrated in ion traps and other atomic…

Mesoscale and Nanoscale Physics · Physics 2008-11-25 M. Abanto , L. Davidovich , Belita Koiller , R. L. de Matos Filho

A quantum dot hybrid qubit formed from three electrons in a double quantum dot has the potential for great speed, due to presence of level crossings where the qubit becomes charge-like. Here, we show how to take full advantage of the level…

Quantum Physics · Physics 2013-08-26 Teck Seng Koh , John King Gamble , Mark Friesen , M. A. Eriksson , S. N. Coppersmith

We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by…

Mesoscale and Nanoscale Physics · Physics 2008-03-25 F. E. Hudson , A. J. Ferguson , C. C. Escott , A. S. Dzurak , R. G. Clark , D. N. Jamieson , C. Yang

Quantum dots can confine single electrons or holes to define spin qubits that can be operated with high fidelity. Experimental work has progressed from linear to two-dimensional arrays of quantum dots, enabling qubit interactions that are…

Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an…

As with any quantum computing platform, semiconductor quantum dot devices require sophisticated hardware and controls for operation. The increasing complexity of quantum dot devices necessitates the advancement of automated control software…

Mesoscale and Nanoscale Physics · Physics 2019-09-11 A. R. Mills , M. M. Feldman , C. Monical , P. J. Lewis , K. W. Larson , A. M. Mounce , J. R. Petta

Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance towards fault-tolerant implementations, but it poses substantial…

Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. However, when changing top, plunger gate voltages, which are the…

A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…

Mesoscale and Nanoscale Physics · Physics 2009-04-28 W. H. Lim , H. Huebl , L. H. Willems van Beveren , S. Rubanov , P. G. Spizzirri , S. J. Angus , R. G. Clark , A. S. Dzurak
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