Related papers: Quantum dots with split enhancement gate tunnel ba…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…
We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their…
Accurate and efficient implementation of parallel quantum gates is crucial for scalable quantum information processing. However, the unavoidable crosstalk between qubits in current noisy processors impedes the achievement of high gate…
The initial proposal for scalable optical quantum computing required single photon sources, linear optical elements such as beamsplitters and phaseshifters, and photon detection. Here we demonstrate a two qubit gate using indistinguishable…
We investigate a system of three tunnel-coupled semiconductor quantum dots in a triangular geometry, one of which is connected to a metallic lead, in the regime where each dot is essentially singly occupied. Both ferro- and…
We report on the observation of Kondo and split Kondo peaks in single-molecule transistors containing a single spin transition molecule with a Fe2+ ion. Coulomb blockade characteristics reveal a double quantum dot behavior in a parallel…
We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS$_{2}$ bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically…
Semiconductor quantum dots in silicon are promising qubits because of long spin coherence times and their potential for scalability. However, such qubits with complete electrical control and fidelities above the threshold for quantum error…
A design for a large-scale surface code quantum processor based on a node/network approach is introduced for semiconductor quantum dot spin qubits. The minimal node contains only 7 quantum dots, and nodes are separated on the micron scale,…
Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…
We present a gradient-based method to construct high-fidelity, two-qubit quantum gates in a system consisting of two transmon qubits coupled via a tunable coupler. In particular, we focus on single flux quantum (SFQ) pulses as a promising…
Superconducting quantum devices are a leading technology for quantum computation, but they suffer from several challenges. Gate errors, coherence errors and a lack of connectivity all contribute to low fidelity results. In particular,…
We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual…
Solid-state quantum computer architectures with qubits encoded using single atoms are now feasible given recent advances in atomic doping of semiconductors. Here we present a charge qubit consisting of two dopant atoms in a semiconductor…
We theoretically investigate transport signatures of quantum interference in highly symmetric double quantum dots in a parallel geometry and demonstrate that extremely weak symmetry-breaking effects can have a dramatic influence on the…
An error-corrected quantum processor will require millions of qubits, accentuating the advantage of nanoscale devices with small footprints, such as silicon quantum dots. However, as for every device with nanoscale dimensions, disorder at…
We report on two top-gate defined, coupled quantum dots in a semiconducting single wall carbon nanotube, constituting a tunable double quantum dot system. The single wall carbon nanotubes are contacted by titanium electrodes, and gated by…
Uniformly controlled one-qubit gates are quantum gates which can be represented as direct sums of two-dimensional unitary operators acting on a single qubit. We present a quantum gate array which implements any n-qubit gate of this type…
In traditional approaches of obtaining quantized acoustoelectric current, a narrow channel is fabricated to form quantum dots, which hold a fixed number of electrons at a certain depth. We propose a natural way of forming quantum dots…
We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…