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Single-layer transition metal dichalcogenides (TMDCs) can adopt two distinct structures corresponding to different coordination of the metal atoms. TMDCs adopting the T-type structure exhibit a rich and diverse set of phenomena, including…

Mesoscale and Nanoscale Physics · Physics 2020-07-29 Daniel T. Larson , Wei Chen , Steven B. Torrisi , Jennifer Coulter , Shiang Fang , Efthimios Kaxiras

We use density functional theory (DFT) to explore the physical properties of an $Er_{ W}$ point defect in monolayer $WS_{ 2}$. Our calculations indicate that electrons localize at the dangling bonds associated with a tungsten vacancy…

Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode…

Although 2D solids and their vdW heterostructures have garnered much attention recently, their amorphous forms have been less explored. We present a detailed analysis of the structural, electronic, and thermal properties of 2D amorphous…

Materials Science · Physics 2023-05-16 Emel Gürbüz , Biplab Sanyal

Topological defects (TDs) are crucial for understanding important physical properties of crystalline materials including mechanical failure, ion transport, and two-dimensional melting. This concept has not translated to disordered materials…

Materials Science · Physics 2026-04-09 Matteo Baggioli , Michael L. Falk , Walter Kob

Thin films of amorphous (a)-TiO2 are ubiquitous as photocatalysts, protective coatings, photoanodes and in memory application, where they are exposed to excess electrons and holes. We investigate trapping of excess electrons and holes in…

Materials Science · Physics 2020-08-19 David Mora-Fonz , Moloud Kaviani , Alexander L. Shluger

Hydrogen point defects in silicon still hold unsolved problems, whose disclosure is fundamental for future advances in Si technologies. Among the open issues is the mechanism for the condensation of atomic hydrogen into molecules in Si…

Materials Science · Physics 2022-04-29 Diana Gomes , Vladimir P. Markevich , Anthony R. Peaker , José Coutinho

The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), was studied in…

The adsorption of C60 on Si(111) has been studied by means of first-principles density functional calculations. A 2x2 adatom surface reconstruction was used to simulate the terraces of the 7x7 reconstruction. The structure of several…

Using first principles calculations we have studied the formation energies, electron and hole affinities, and electronic levels of intrinsic point defects in zircon. The atomic structures of charged interstitials, vacancies, Frenkel pairs…

Materials Science · Physics 2007-05-23 J. M. Pruneda , Emilio Artacho

Highly accurate experimental structure factors of silicon are available in the literature, and these provide the ideal test for any \emph{ab initio} method for the construction of the all-electron charge density. In a recent paper [J. R.…

Materials Science · Physics 2015-05-14 J. R. Trail , D. M. Bird

In this work an overall electronic structure including the position and formation energies of various intrinsic defects are computed for anatase using Density Functional Theory aided by Hubbard correction (DFT+U). The intrinsic point…

We report a new approach to simulate amorphous networks of covalently bonded materials that leads to excellent radial distribution functions and realistic atomic arrangements. We apply it to generate the first ab initio structures of…

Materials Science · Physics 2007-05-23 Fernando Alvarez , Ariel A. Valladares

We report first-principles calculations that reveal the atomic forms, stability, and energy levels of carbon-related defects in SiC (0001)/SiO$_{\rm 2}$ systems. We clarify the stable position (SiC side, SiO$_{\rm 2}$ side, or just at the…

Materials Science · Physics 2019-10-15 Takuma Kobayashi , Yu-ichiro Matsushita

In $e$-beam evaporated amorphous silicon ($a$-Si), the densities of two-level systems (TLS), $n_{0}$ and $\overline{P}$, determined from specific heat $C$ and internal friction $Q^{-1}$ measurements, respectively, have been shown to vary by…

Disordered Systems and Neural Networks · Physics 2020-11-17 D. R. Queen , X. Liu , J. Karel , H. C. Jacks , T. H. Metcalf , F. Hellman

Several static and dynamic properties of liquid silicon near melting have been determined from an orbital free {\em ab-initio} molecular dynamics simulation. The calculated static structure is in good agreement with the available X-ray and…

Materials Science · Physics 2015-06-25 A. Delisle , D. J. Gonzalez , M. J. Stott

Ab initio simulations are capable of providing detailed information of material behavior at the nanoscale. Simulating experimentally relevant situations is, however, often computationally intense. Using hybrid approaches between ab initio…

Computational Physics · Physics 2019-03-26 Michael Sluydts , Michiel Larmuseau , Johan Lauwaert , Stefaan Cottenier

The study of defects in materials is of utmost importance for technological applications and the design of new materials. In this work, we analyze the performance of density functional approximations on two prototypical sets of defective…

Advancements in modern semiconductor devices increasingly depend on the utilization of amorphous materials and the reduction of material thickness, pushing the boundaries of their physical capabilities. The mechanical properties of these…

Applied Physics · Physics 2024-05-31 C. Pashartis , M. J. van Setten , M. Houssa , G. Pourtois

Three single-layer tetragonal silicon carbides (SiC), termed as T1,T2 and T3, are proposed by density functional theory (DFT) computations. Although the three structures have the same topological geometry, they show versatile electronic…

Materials Science · Physics 2016-01-12 Chao Yang , Yuee Xie , Li-Min Liu , Yuanping Chen
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