Related papers: Valley and spin splittings in PbSe nanowires
Effect of electric field on spin splitting in SiGe quantum wells (QWs) has been studied theoretically. Microscopical calculations of valley and spin splittings are performed in the effective $sp^3d^5s^*$ tight-binding model. The splittings…
Quasi-one-dimensional hole gas is achievable in a semiconductor Ge nanowire. The lowest two subband dispersions of the hole gas are just two shifted parabolic curves with an anticrossing at $k_{z}=0$. This peculiar low-energy subband…
In silicon spin qubits, the valley splitting must be tuned far away from the qubit Zeeman splitting to prevent fast qubit relaxation. In this work, we study in detail how the valley splitting depends on the electric and magnetic fields as…
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show…
We study theoretically the low-energy hole states of Ge/Si core/shell nanowires. The low-energy valence band is quasidegenerate, formed by two doublets of different orbital angular momenta, and can be controlled via the relative shell…
In two-dimensional (2D) hole systems the inversion asymmetry induced spin splitting differs remarkably from its familiar counterpart in the conduction band. While the so-called Rashba spin splitting of electron states increases linearly…
We have investigated beating patterns in Shubnikov-de Haas oscillations for HgTe/Hg_{0.3}Cd_{0.7}Te(001) quantum wells with electron densities of 2 to 3 X 10^{12} cm^{-2}. Up to 12 beating nodes have been observed at magnetic fields between…
Current semiconductor qubits rely either on the spin or on the charge degree of freedom to encode quantum information. By contrast, in bilayer graphene the valley degree of freedom, stemming from the crystal lattice symmetry, is a robust…
The electronic structure of nanowires in contact with metallic electrodes of experimentally relevant sizes is calculated by incorporating the electrostatic polarization potential into the atomistic single particle Schr\"odinger equation. We…
We investigate the low-temperature magneto-transport properties of individual Ge/Si core/shell nanowires. Negative magneto-conductance was observed, which is a signature of one-dimensional weak antilocalization of holes in the presence of…
Zigzag edges of graphene nanostructures host localized electronic states that are predicted to be spin-polarized. However, these edge states are highly susceptible to edge roughness and interaction with a supporting substrate, complicating…
e have calculated the spin-orbit (SO) splitting $\Delta_{SO}=\epsilon (\Gamma_{8v}) - \epsilon (\Gamma_{7v})$ for all diamond-like group IV and zinc-blende group III-V, II-VI, and I-VII semiconductors using the full potential linearized…
The concept of vectorial spin analysis in spin and angle resolved photoemission is illustrated in this report. Two prototypical systems, Bi/Ag(111)(sqrt3 x sqrt3)R30 and Pb/Ag(111)(sqrt3 x sqrt3)R30, which show a large Rashba type…
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursued to increase the valley splitting energy deterministically,…
Saturation magnetization values close to the bulk have been reported for coated magnetite nanoparticles with organic acids. The mechanism of this effect is not yet understood. Here we show that a previously proposed rationalization in Nano…
Methods to generate spin-polarised electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. This is generally accepted to require breaking global…
The presence of degenerate conduction band valleys and how they are mixed by interfaces play critical roles in determining electron interaction and spectrum in a silicon nanostructure. Here we investigate how the valley phases affect the…
We show that for lattice-mismatched zinc-blende-type (110)-grown quantum wells a significant contribution to the zero-magnetic-field spin splitting of electron subbands comes from strain-induced spin-orbit coupling. Combining envelope…
We theoretically study the spin-orbit interaction in the outer regions of core-shell nanowires that can act as tubular, prismatic conductors. The polygonal cross section of these wires induces non-uniform electron localization along the…
We determine the energy splitting of the conduction-band valleys in two-dimensional (2D) electrons confined in silicon metal oxide semiconductor (Si-MOS) Hall-bar transistors. These Si-MOS Hall bars are made by advanced semiconductor…