Related papers: Valley and spin splittings in PbSe nanowires
For a nanowire quantum dot with the confining potential modeled by both the infinite and the finite square wells, we obtain exactly the energy spectrum and the wave functions in the strong spin-orbit coupling regime. We find that regardless…
Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focussing peak splits into two spin dependent peaks, allowing…
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar…
Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. However, when changing top, plunger gate voltages, which are the…
We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting…
Spin splitting, or removal of spin degeneracy in the electronic energy band/level is often a measure of spin-orbit coupling strength and a way to manipulate spin degrees of freedom. We use first-principles simulations to predict giant spin…
Exciton luminescence of a CdSe quantum dot (QD) inserted in a ZnSe nanowire is strongly influenced by the dark exciton states. Because of the small size of these QDs (2-5nm), exchange interaction between hole and electron is highly enhanced…
We present a theoretical study of the Pauli or spin-valley blockade for double quantum dots in semiconducting carbon nanotubes. In our model we take into account the following characteristic features of carbon nanotubes: (i) fourfold (spin…
We investigate the optical control possibilities of spin-valley qubit carried by single electrons localized in nanostructures of monolayer TMDs, including small quantum dots formed by lateral heterojunction and charged impurities. The…
The valley splitting of 2D electrons in doubly-gated silicon-on-insulator quantum wells is studied by low temperature transport measurements under magnetic fields. At the buried thermal-oxide SiO$_{2}$ interface, the valley splitting…
We investigate the effect of the valley degree of freedom on Pauli-spin blockade readout of spin qubits in silicon. The valley splitting energy sets the singlet-triplet splitting and thereby constrains the detuning range. The valley phase…
A Rashba type spin-orbit splitting is found for quantum well states formed in ultrathin Pb films on Si(111). The resulting momentum splitting is comparable to what is found for semiconductor heterostructures. The splitting shows no coverage…
Proximity orbital and spin-orbit effects of bilayer graphene on monolayer WSe$_2$ are investigated from first-principles. We find that the built-in electric field induces an orbital band gap of about 10 meV in bilayer graphene. Remarkably,…
Bilayer graphene hosts valley-chiral one dimensional modes at domain walls between regions of different interlayer potential or stacking order. When such a channel is brought into proximity to a superconductor, the two electrons of a Cooper…
Motion of electrons can influence their spins through a fundamental effect called spin-orbit interaction. This interaction provides a way to electrically control spins and as such lies at the foundation of spintronics. Even at the level of…
The effect of spin-orbit coupling (SOC) on the electronic properties of monolayer (ML) PtSe$_2$ is dictated by the presence of the crystal inversion symmetry to exhibit spin polarized band without characteristic of spin splitting. Through…
Since the last century, considerable efforts have been devoted to the study of valley-degenerate narrow gap semiconductors, such as the Pb$_{1-x}$Sn$_x$Se alloy. This material possesses band edges at the $L$-points of their Brillouin zone,…
We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few…
Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra of a few-electron silicon metal-oxide-semiconductor quantum…
Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical…