Related papers: Proximity effect and interface transparency in Al/…
An external magnetic field is needed to drive a nanowire in proximity to an s-wave superconductor into a topological regime which supports Majorana end states. However, a magnetic field generally suppresses the proximity superconducting gap…
Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high…
Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable…
The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations between x = 0.08 and 1. Structural analysis by high resolution…
We report low-temperature measurements of current-voltage characteristics for highly conductive Nb/Al-AlOx-Nb junctions with thicknesses of the Al interlayer ranging from 40 to 150 nm and ultra-thin barriers formed by diffusive oxidation of…
We investigate the phenomenon of reflectionless tunneling in ballistic normal-metal--superconductor (NS) structures, using a semiclassical formalism. It is shown that applied magnetic field and superconducting phase difference both impair…
Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of…
More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson…
We study the conductance through two types of graphene nanostructures: nanoribbon junctions in which the width changes from wide to narrow, and curved nanoribbons. In the wide-narrow structures, substantial reflection occurs from the…
We have fabricated longitudinal nanoconstrictions in the charge-density wave conductor (CDW) NbSe$_{3}$ using a focused ion beam and using a mechanically controlled break-junction technique. Conductance peaks are observed below the…
We study the density of states (DoS) $\nu(E)$ in a normal-metallic (N) film contacted by a bulk superconductor (S). We assume that the system is diffusive and the SN interface is transparent. In the limit of thin N layer (compared to the…
We present a theory of the current-voltage characteristics in diffusive superconductor-normal-metal-superconductor junctions. By solving the time-dependent Usadel equations we are able to describe the phase-coherent transport for arbitrary…
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in…
A strong mutual influence of superconductors (S) and ferromagnetic (F) conductors in hybrid F/S (Ni/Al) nanostructures is observed. The magnitude of a proximity-induced conductance on the F-side is more than two orders larger than that…
Inducing superconductivity in systems with unconventional band structures is a promising approach for realising unconventional superconductivity. Of particular interest are single interface or Josephson Junction architectures involving Weyl…
Resonant proximity effect in the normal metal / insulator / diffusive ferromagnet / insulator / $s$- and d-wave superconductor (N/I/DF/I/S) junctions is studied for various regimes by solving the Usadel equation with the generalized…
Complete suppression of the native n-type Schottky barrier is demonstrated in Al/InGaAs(001) junctions grown by molecular-beam-epitaxy. This result was achieved by the insertion of Si bilayers at the metal-semiconductor interface allowing…
Semiconductor nanowires provide promising low-dimensional systems for the study of quantum transport phenomena in combination with superconductivity. Here we investigate the competition between the Coulomb blockade effect, Andreev…
We report a systematic experimental study of mesoscopic conductance fluctuations in superconductor/normal/superconductor (SNS) devices Nb/InAs-nanowire/Nb. These fluctuations far exceed their value in the normal state and strongly depend on…
We study the transport properties of a NSN structure with an insulating barrier at each NS interface. Coherent quasiparticle scattering is assumed and self-consistency is implemented exactly to guarantee local charge conservation. The…