Related papers: Proximity effect and interface transparency in Al/…
Charge transport properties of a diffusive normal metal /triplet superconductor (DN/TS) junction are studied based on the Keldysh-Nambu quasiclassical Green's function formalism. % Contrary to the unconventional singlet superconductor…
Within the context of superconducting gap engineering, Al-\alox-Al tunnel junctions have been used to study the variation in superconducting gap, $\Delta$, with film thickness. Films of thickness 5, 7, 10 and 30 nm were used to form the…
Proposals for studying topological superconductivity and Majorana bound states in nanowires proximity coupled to superconductors require that transport in the nanowire is ballistic. Previous work on hybrid nanowire-superconductor systems…
In this letter we report on proximity superconductivity induced in CdTe-HgTe core-shell nanowires, a quasi-one-dimensional heterostructure of the topological insulator HgTe. We demonstrate a Josephson supercurrent in our nanowires contacted…
We consider a planar superconducting-normal-metal (SN) junction with both inelastic and spin-flip scattering processes present. In the diffusive limit, we use a one-dimensional formulation of the Usadel equation to compute the…
We present a theoretical analysis of the proximity effect at a graphene-superconductor interface. We use a tight-binding model for the electronic states in this system which allows to describe the interface at the microscopic level. Two…
Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced…
Enhanced proximity effect by mid gap Andreev resonant state (MARS) in a diffusive normal metal / insulator / triplet superconductor (DN/TS) junction is studied based on the Keldysh-Nambu quasiclassical Green's function formalism. By…
We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to…
Density functional theory paired with a first order many-body perturbation theory correction is applied to determine formation energies and charge transition energies for point defects in bulk In_0.53Ga_0.47As and for models of the…
Implementing superconductors capable of proximity-inducing a large energy-gap in semiconductors in the presence of strong magnetic fields is a major goal towards applications of semiconductor/superconductor hybrid materials in future…
We review a novel approach to the superconductive proximity effect in disordered normal-superconducting (N-S) structures. The method is based on the multicharge Keldysh action and is suitable for the treatment of interaction and fluctuation…
Interfaces dominate heat conduction in nanostructured systems, and much work has focused on methods to enhance interfacial conduction. These approaches generally address planar interfaces, where the heat flux vector is everywhere normal to…
Ramp-type junctions of $\rm Au-Bi_2Se_3-NbN$ were prepared on top of a bottom gate comprised of a $\rm SrTiO_3$ gate-insulator film on $\rm NbN$ gate-electrode layer on (100) $\rm SrTiO_3$ wafer. Two wafers with gate-insulator thickness of…
Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying…
The effect of dc electrical stress and breakdown on Josephson and quasiparticle tunneling in Nb/Al/AlOx/Nb junctions with ultrathin AlOx barriers typical for applications in superconductor digital electronics has been investigated. The…
In a search for a simple proximity system of a topological insulator and a superconductor for studying the role of surface versus bulk effects by gating, we report here on a first step toward this goal, namely the choice of such a system…
We have formed superconducting contacts in which Cooper pairs incident from a thick In layer must move through a thin Nb layer to reach a semiconductor, either InAs or low temperature grown (LTG) GaAs. The effect of pair tunneling through…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
We report quantum interference effects in InAs semiconductor nanowires strongly coupled to superconducting electrodes. In the normal state, universal conductance fluctuations are investigated as a function of magnetic field, temperature,…