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Related papers: Security Protection for Magnetic Tunnel Junction

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Security and energy are considered as the most important parameters for designing and building a computing system nowadays. Today's attacks target different layers of the computing system (i.e. software and hardware). Introduction of new…

Cryptography and Security · Computer Science 2017-04-27 Shayan Taheri , Jiann-Shiun Yuan

Ensuring high performance, while meeting the power budget is a challenging task as the world is moving towards next-generation computing. Researchers and designers are in search of new solutions for efficient computation. Spintronics…

Applied Physics · Physics 2022-08-31 Jagadish Rajpoot , Ravneet Paul , Shivam Verma

We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also…

Other Condensed Matter · Physics 2009-11-13 J. Z. Sun , D. C. Ralph

Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible…

Materials Science · Physics 2016-03-15 Li Ming Loong , Wonho Lee , Xuepeng Qiu , Ping Yang , Hiroyo Kawai , Mark Saeys , Jong-Hyun Ahn , Hyunsoo Yang

Straintronic magneto-tunneling junction (s-MTJ) switches, whose resistances are controlled with voltage-generated strain in the magnetostrictive free layer of the MTJ, are extremely energy-efficient switches that would dissipate a few aJ of…

Emerging Technologies · Computer Science 2017-07-18 S. Dey Manasi , M. M. Al Rashid , J. Atulasimha , S. Bandyopadhyay , A. R. Trivedi

Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…

Applied Physics · Physics 2019-07-24 Piotr Rzeszut , Witold Skowroński , Sławomir Ziętek , Jerzy Wrona , Tomasz Stobiecki

Magnetic Tunnel Junctions (MTJs) have shown great promise as hardware sources for true random number generation (TRNG) due to their intrinsic stochastic switching behavior. However, practical deployment remains challenged by drift in…

Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power and energy is consumed by constant data transfers between…

Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficient Logic-in-Memory (LIM) architectures based on non-volatile resistive memory devices. The SIMPLY logic is enabled by adding a comparator…

Emerging Technologies · Computer Science 2022-06-01 Raffaele De Rose , Tommaso Zanotti , Francesco Maria Puglisi , Felice Crupi , Paolo Pavan , Marco Lanuzza

Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized…

Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…

Materials Science · Physics 2012-09-06 Luqiao Liu , Chi-Feng Pai , D. C. Ralph , R. A. Buhrman

This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the…

Emerging Technologies · Computer Science 2021-06-10 Fernando García-Redondo , Pranay Prabhat , Mudit Bhargava , Cyrille Dray

Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free…

Mesoscale and Nanoscale Physics · Physics 2021-05-05 Kerem Y. Camsari , Mustafa Mert Torunbalci , William A. Borders , Hideo Ohno , Shunsuke Fukami

We review two magnetic tunnel junction (MTJ) approaches for compact, low-power, CMOS-integrated true random number generation (TRNG). The first employs passive-read, easy-plane superparamagnetic MTJs (sMTJs) that generate…

Mesoscale and Nanoscale Physics · Physics 2026-01-15 Jonathan Z. Sun , Christopher Safranski , Siyuranga Koswata , Pouya Hashemi , Andrew D. Kent

Superparamagnetic tunnel junctions (SMTJs) have emerged as a competitive, realistic nanotechnology to support novel forms of stochastic computation in CMOS-compatible platforms. One of their applications is to generate random bitstreams…

Emerging Technologies · Computer Science 2020-03-09 Matthew W. Daniels , Advait Madhavan , Philippe Talatchian , Alice Mizrahi , Mark D. Stiles

Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential applications of MTJs are being actively studied, including…

Emerging Technologies · Computer Science 2021-02-09 Piotr Rzeszut , Jakub Chęciński , Ireneusz Brzozowski , Sławomir Ziętek , Witold Skowroński , Tomasz Stobiecki

Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…

Stochastic computing, a form of computation with probabilities, presents an alternative to conventional arithmetic units. Magnetic Tunnel Junctions (MTJs), which exhibit probabilistic switching, have been explored as Stochastic Number…

Emerging Technologies · Computer Science 2018-04-11 Ankit Mondal , Ankur Srivastava

Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated.…

We report on the noise performance characteristics of magnetic sensors using both magnetic tunnel junction (MTJ) and giant magnetoresistance (GMR) elements. Each sensor studied has a notably different noise and detectivity. Of the sensors…

Materials Science · Physics 2021-02-24 J. E. Davies , J. D. Watts , J. Novotny , D. Huang , P. G. Eames
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