Related papers: Security Protection for Magnetic Tunnel Junction
We propose a new defense mechanism against undetected infiltration into controllers in cyber-physical systems. To this end, we cautiously design the outputs of the sensors that monitor the state of the system. Different from the defense…
Magnetic tunnel junctions operating in the superparamagnetic regime are promising devices in the field of probabilistic computing, which is suitable for applications like high-dimensional optimization or sampling problems. Further, random…
Intel SGX and hypervisors isolate non-privileged programs from other software, ensuring confidentiality and integrity. However, side-channel attacks continue to threaten Intel SGX's security, enabling malicious OS to manipulate PTE present…
We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel…
State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems. One of the approaches to performing in-memory computation is…
Security has become, nowadays, a major concern for the organizations as the majority of its applications are exposed to Internet, which increases the threats of security considerably. Thus, the solution is to improve tools and mechanisms to…
A major security threat to an integrated circuit (IC) design is the Hardware Trojan attack which is a malicious modification of the design. Previously several papers have investigated into side-channel analysis to detect the presence of…
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate…
As quantum computing advances, quantum circuit simulators serve as critical tools to bridge the current gap caused by limited quantum hardware availability. These simulators are typically deployed on cloud platforms, where users submit…
The global semiconductor supply chain involves design and fabrication at various locations, which leads to multiple security vulnerabilities, e.g., Hardware Trojan (HT) insertion. Although most HTs target digital circuits, HTs can be…
This paper presents a design flow for an improved selective multi-threshold(Selective-MT) circuit. The Selective-MT circuit is improved so that plural MT-cells can share one switch transistor. We propose the design methodology from…
The balance between low power consumption and high efficiency in memory devices is a major limiting factor in the development of new technologies. Magnetic random access memories (MRAM) based on CoFeB/MgO magnetic tunnel junctions (MTJs)…
This work investigates nanosecond superparamagnetic switching in 50 nm diameter in-plane magnetized magnetic tunnel junctions (MTJs). Due to the small in-plane uniaxial anisotropy, dwell times below 10 ns and auto-correlation times down to…
Emerging memristor computing systems have demonstrated great promise in improving the energy efficiency of neural network (NN) algorithms. The NN weights stored in memristor crossbars, however, may face potential theft attacks due to the…
Magnetic tunnel junctions are nanoscale devices which have recently attracted interested in the context of frequency multiplexed spintronic neural networks, due to their interesting dynamical properties, which are defined during the…
True random number generators are of great interest in many computing applications such as cryptography, neuromorphic systems and Monte Carlo simulations. Here we investigate perpendicular magnetic tunnel junction nanopillars (pMTJs)…
The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of…
Commercially successful magnetic tunnel junction can harness the unmatched capabilities of molecular device elements by solving decade-old fabrication issues. Utilization of magnetic tunnel junction as a testbed for molecules also enables…
Several experimental techniques have been introduced in recent years in attempts to measure spin transfer torque in magnetic tunnel junctions (MTJs). The dependence of spin torque on bias is important for understanding fundamental spin…
We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of…