Related papers: White light emission from silicon nanoparticles
The development of versatile and novel material platforms for integrated photonics is of prime importance in the perspective of future applications of photonic integrated circuits for quantum information and sensing. Here we present a…
A convenient method has been developed to thin electron beam fabricated Silicon nanopillars under controlled surface manipulation by transforming the surface of the pillars to an oxide shell layer followed by the growth of sacrificial…
Luminescence and optical absorption due to radiation damage centers in silicon has been studied exhaustively for decades, but is receiving new interest for applications as emitters for integrated silicon photonic technologies. While a…
We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector…
In this paper, we present an envelope function analysis in order to design the emission spectra of a white quantum well light emitting diode. The nanometric heterostructure that we are dealing with is a multiple quantum well, consisting…
We report optical transmission measurements on suspended silicon photonic-crystal waveguides, where one side of the photonic lattice is shifted by half a period along the waveguide axis. The combination of this glide symmetry and slow light…
Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at. %) silica-gel films (0.13…
Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III-V semiconductors onto Si platform, which is highly promising to build lasers for Si photonics. However, the lasing from…
The limited resolution of a conventional optical microscope stems from the fact that the subwavelength information of an object is carried by evanescent waves, which exponentially decays in space and cannot reach the imaging plane. We…
Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared color centers for long- haul quantum communication and…
We propose a new scintillation-type detector in which high-energy radiation produces electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The…
Silicon carbide (SiC) is a highly promising material for the rapidly growing UV detection industry due to its visible-blindness, low dark current, and exceptional thermal and chemical stability. Despite these advantages, the performance of…
To find practical application as photon sources for entangled optical resource states or as spin-photon interfaces in entangled networks, semiconductor emitters must produce indistinguishable photons with high efficiency and spectral…
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an…
White laser covering the visible color spectrum is critical in various applications including vivid display, holographic imaging and light-based version of Wi-Fi, but it is still challenging to realize the white microlaser due to the…
We propose and demonstrate subwavelength grating (SWG) metamaterial waveguides and ring resonators on a silicon nitride platform for the first time. The SWG waveguide is engineered such that a large overlap of 53% of the Bloch mode with the…
Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range…
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements…
Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…
We present the results of a systematic study of photoelectron emission from gasphase dielectric nanoparticles (SiO2) irradiated by intense 25 fs, 780 nm linearly polarized laser pulses as a function of particle size (20 nm to 750 nm in…