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A numerical method based on the transfer matrix technique is developed to calculate the luminescence spectra of complex layered structures with photon recycling. Using this method we show a strong dependence of the emission spectra on the…

Materials Science · Physics 2015-06-24 V. V. Nikolaev , M. E. Portnoi , I. Eliashevich

The gapless surface states of topological insulators (TI) can potentially be used to detect and harvest low-frequency infrared light. Nonetheless, it was shown that significant surface photocurrents due to light with frequency below the…

Mesoscale and Nanoscale Physics · Physics 2015-12-23 Netanel H. Lindner , Aaron Farrell , Eran Lustig , Gil Refael , Felix von Oppen

The extremely low dark current of silicon carbide (SiC) detectors, even after high-fluence irradiation, was utilized to develop a beam monitoring system for a wide range of particle rates, i.e., from the kHz to the GHz regime. The system is…

Instrumentation and Detectors · Physics 2024-03-20 Simon Waid , Andreas Gsponer , Jürgen Maier , Philipp Gaggl , Richard Thalmeier , Thomas Bergauer

A silicon light source at communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium ions was believed to be one of the most promising approaches but suffers from the…

Applied Physics · Physics 2019-01-24 Huimin Wen , Jiajing He , Jin Hong , Fangyu Yue , Yaping Dan

We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is…

Single-photon sources are of paramount importance in quantum communication, quantum computation, and quantum metrology. In particular, there is great interest in realizing scalable solid-state platforms that can emit triggered photons on…

The light yield of a small undoped cesium iodide (CsI) crystal directly coupled with two silicon photomultipliers (SiPMs) at about 77~Kelvin was measured to be $43.0 \pm 1.1$~photoelectrons (PE) per keV electron-equivalent (keV$_\text{ee}$)…

Instrumentation and Detectors · Physics 2022-04-26 Keyu Ding , Jing Liu , Yongjin Yang , Dmitry Chernyak

Optical parametric oscillation (OPO) is distinguished by its wavelength access, that is, the ability to flexibly generate coherent light at wavelengths that are dramatically different from the pump laser, and in principle bounded solely by…

Semiconductor mode-locked lasers can be used in a variety of applications ranging from multi-carrier sources for WDM communication systems to time base references for metrology. Their packaging in compact chip- or module-level systems…

The unrivaled maturity of its nanofabrication makes silicon a promising hardware platform for quantum information processing. To this end, efficient single-photon sources and spin-photon interfaces have been implemented by integrating color…

Quantum Physics · Physics 2026-01-21 Johannes Früh , Fabian Salamon , Andreas Gritsch , Alexander Ulanowski , Andreas Reiserer

Subwavelength semiconductor nanowires have recently attracted interest for photonic applications because they possess various unique optical properties and offer great potential for miniaturizing devices. However, realizing tight light…

Quantum memories integrated into nanophotonic silicon devices are a promising platform for large quantum networks and scalable photonic quantum computers. In this context, erbium dopants are particularly attractive, as they combine optical…

Quantum Physics · Physics 2023-07-27 Stephan Rinner , Florian Burger , Andreas Gritsch , Jonas Schmitt , Andreas Reiserer

From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid…

We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100…

This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer…

As lighting efficiency improves, it is useful to understand the theoretical limits to luminous efficacy for light that we perceive as white. Independent of the efficiency with which photons are generated, there exists a spectrally-imposed…

Optics · Physics 2015-06-17 T. W. Murphy

Hydrogenated amorphous silicon (a:Si-H) has recently been recognized as a highly nonlinear CMOS compatible photonic platform. We experimentally demonstrate the generation of a supercontinuum (SC) spanning over 500 nm in a-Si:H photonic wire…

Optics · Physics 2014-10-22 F. Leo , J. Safioui , B. Kuyken , G. Roelkens , S. -P. Gorza

Semiconductor colloidal nanocrystals are excellent light emitters in terms of efficiency and spectral control. Integrating them with a metasurface would pave the way to ultrathin photoluminescent devices with reduced amount of active…

We report the performance of a silicon wafer beamsplitter for use for low $\Delta\nu>0.3 cm^{-1}$ resolution Fourier transform spectroscopy at far infrared frequencies. We characterize the Si beamsplitter by comparing throughput spectra…

Instrumentation and Detectors · Physics 2007-07-11 Geoffry Evans , D. C. Schmadel , A. B. Sushkov , H. D. Drew

The creation of fluorescent defects in silicon is a key stepping stone towards assuring the integration perspectives of quantum photonic devices into existing technologies. Here we demonstrate the creation, by femtosecond laser annealing,…