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Using plasma-enhanced chemical vapor deposition (PECVD) with Acetylene and Ammoniac on Pd-specimens Carbon nanotubes (CNT) could be produced successfully. Two different devices are compared and the conditions for best growth conditions are…
Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step arrays on Si(111). Atomically smooth wires…
Breakthroughs extending nanostructure engineering beyond what is possible with current fabrication techniques will be crucial for enabling next-generation nanotechnologies. Nanoepitaxy of strain-engineered bent nanowire heterostructures…
In a combined experimental and theoretical study, we investigate the influence of the material source arrangement in a molecular beam epitaxy (MBE) system on the growth of nanowire (NW) core-shell structures. In particular, we study the…
We report a new approach to achieve growth of highly crystalline nickel nanoparticles over an extended range of sizes (up to 100 nm in diameter) and time scales (up to several hours) by diffusional transport of constituent atoms. The…
The spherical curvature induced by pentagons in corannulenes and hexagonal sheets is shown to be the basic constituent that controls the growth of fullerenes and single-walled carbon nanotubes (SWNTs) in soot forming and carbon vapour…
We analyse the morphological, structural and luminescence properties of self-assembled ZnO nanowires grown by chemical vapour transport on Si(001). The examination of nanowire ensembles by scanning electron microscopy reveals that a…
Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for…
The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the…
It is demonstrated by the current work controlled one-to-one synthesis of Ge nanowires (GeNWs) with ~100% yield from Au seed particles. The optimum GeNW growth conditions are found to be size dependent. For < 50 nm Au seeds, under-growth,…
Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when epitaxial templating from the substrate is clearly absent. Here, we reveal the physics underlying one such hidden growth guidance mechanism…
We investigate core/shell GaAs/(Pb,Sn)Te nanowire nanoheterostructures with wurtzite (wz) GaAs cores and (Pb,Sn)Te topological crystalline insulator shells. The nanostructures have been grown by molecular beam epitaxy using two distinct MBE…
We report on the direct correlation between the structural and optical properties of single, as-grown core-multi-shell GaAs/In$_{0.15}$Ga$_{0.85}$As/GaAs/AlAs/GaAs nanowires. Fabricated by molecular beam epitaxy on a pre-patterned Si(111)…
We grow nearly freestanding single-layer 1T'-WTe2 on graphitized 6H-SiC(0001) by using molecular beam epitaxy (MBE), and characterize its electronic structure with scanning tunneling microscopy / spectroscopy (STM/STS). We demonstrate the…
The in-plane coefficient of thermal expansion (CTE) for CdSe nanoplatelets with the zinc-blende structure containing from two to five monolayers is calculated from first principles within the quasiharmonic approximation. A comparison of the…
Al(0.37)Ga(0.63)As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core-shell structure and Al composition…
Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important…
As a typical 2D magnetic material with self-intercalated structure, Cr5Te8 exhibits many fascinating magnetic properties. Although the ferromagnetism of 2D Cr5Te8 has been reported, the study of its magnetic domain is still blank. Herein,…
Transition metal dichalcogenides exhibit a wide range of semiconducting, metallic, correlated, and topological electronic states that arise from strong coupling between lattice structure, dimensionality, and electronic degrees of freedom.…
We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy (MBE) at 220 {\deg}C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs…