We investigate core/shell GaAs/(Pb,Sn)Te nanowire nanoheterostructures with wurtzite (wz) GaAs cores and (Pb,Sn)Te topological crystalline insulator shells. The nanostructures have been grown by molecular beam epitaxy using two distinct MBE systems dedicated to III-V, and IV-VI semiconductors. The interface structure of wz-GaAs/(Pb,Sn)Te nanowires is investigated using high resolution transmission electron microscopy, scanning transmission electron microscopy and geometric phase analysis. Misfit dislocations and moir\'e fringes are observed as a direct result of the lattice mismatch between the core and the shell materials, and used to estimate strain in crystalline topological insulator shells. Our results point to a possibility of using moir\'e patterns analysis as an alternative, for estimating strain in the core-shell nanowire structures.
@article{arxiv.2605.06603,
title = {Moire based strain analysis in wurtzite GaAs -- rock-salt (Pb,Sn)Te core-shell nanowires grown by molecular beam epitaxy},
author = {Maciej Wojcik and Sania Dad and Piotr Dziawa and Slawomir Kret and Wojciech Pacuski and Janusz Sadowski},
journal= {arXiv preprint arXiv:2605.06603},
year = {2026}
}