Related papers: Band inversion at critical magnetic fields in a si…
We report a continuous phase transition between quantum-anomalous-Hall and trivial-insulator phases in a magnetic topological insulator upon magnetization rotation. The Hall conductivity transits from one plateau of quantized Hall…
The recent Quantum Hall experiments in graphene have confirmed the theoretically well-understood picture of the quantum Hall (QH) conductance in fermion systems with continuum Dirac spectrum. In this paper we take into account the lattice,…
Low-energy magnon bands in a two-dimensional spin ice model become integer quantum magnon Hall bands. By calculating the localization length and the two-terminal conductance of magnon transport, we show that the magnon bands with disorders…
A finite transfer integral $t_a$ orthogonal to the conducting chains of a highly one-dimensional metal gives rise to empty and filled bands that simulate an indirect-gap semiconductor upon formation of a commensurate charge-density-wave…
The electronic properties of a bricklayer model, which shares the same topology as the hexagonal lattice of graphene, are investigated numerically. We study the influence of random magnetic-field disorder in addition to a strong…
The puzzle of recently observed insulating phase of graphene at filling factor $\nu=0$ in high magnetic field quantum Hall (QH) experiments is investigated. We show that the magnetic field driven Peierls-type lattice distortion (due to the…
We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of HgTe quantum dot with an inverted band…
In this work we analyze infinite graphene nanoribbons subjected to non-uniform magnetic fields that produce topological domain walls in the quantum Hall regime. We show how the proximity between edge states from neighboring domains modifies…
The band bending (BB) effect on the surface of the second-generation topological insulators implies a serious challenge to design transport devices. The BB is triggered by the effective electric field generated by charged impurities close…
Quantum spin Hall (QSH) insulator with large gap is highly desirable for potential spintronics application. Here we realize electrically tunable QSH insulator with large gap in van der Waals heterobilayer of monolayer transition metal…
The charge-density-wave (CDW) mechanism of the 3D quantum Hall effect has been observed recently in ZrTe$_5$ [Tang et al., Nature 569, 537 (2019)]. Different from previous cases, the CDW forms on a one-dimensional (1D) band of Landau…
The results of the longitudinal and Hall magnetoresistivity measurements in the Shubnikov - de Haas oscillation regime for the HgCdTe/HgTe/HgCdTe heterostructures with a wide (20.3 nm) HgTe quantum well are presented. An anomalous phase…
We report a magneto-induced topological phase transition in inverted InAs/GaSb bilayers from a quantum spin Hall insulator to a normal insulator. We utilize a dual-gated Corbino device in which the degree of band inversion, or equivalently…
We study the influence of the quantum geometry on the magnetic responses of quadratic band crossing semimetals. More explicitly, we examine the Landau levels, quantum Hall effect, and magnetic susceptibility of a general two-band…
The dynamic conductivity \sigma(\omega) of graphene in the presence of diagonal white noise disorder and quantizing magnetic field B is calculated. We obtain analytic expressions for \sigma(\omega) in various parametric regimes ranging from…
The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…
Sharp localization transitions of chiral edge states in disordered quantum wires, subject to strong magnetic field, are shown to be driven by crossovers from two- to one-dimensional localization of bulk states. As a result, the two-terminal…
We investigate a lateral semiconductor quantum dot with a large number of electrons in the limit of strong coupling to the leads. A Kondo effect is observed and can be tuned in a perpendicular magnetic field. This Kondo effect does not…
The non-linear (electric field-dependent) resistivity of the 2D electron system in silicon exhibits scaling as a function of electric field and electron density in both the metallic and insulating phases, providing further evidence for a…
Using the tight-binding approach, we investigate the energy spectrum of square, triangular and hexagonal MoS$_2$ quantum dots (QDs) in the presence of a perpendicular magnetic field. Novel edge states emerge in MoS$_2$ QDs, which are…