Related papers: Gate tunable parallel double quantum dot in InAs d…

Generating and detecting radiation in the technologically relevant range of the so-called terahertz gap ($0.1 - 10$ THz) is challenging because of a lack of efficient sources and detectors. Quantum dots in carbon nanotubes have shown great…

Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising…

The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…

We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm$^2$/Vs. We have observed…

Degeneracy and symmetry have a profound relation in quantum systems. Here, we report gate-tunable subband degeneracy in PbTe nanowires with a nearly symmetric cross-sectional shape. The degeneracy is revealed in electron transport by the…

We report on two top-gate defined, coupled quantum dots in a semiconducting single wall carbon nanotube, constituting a tunable double quantum dot system. The single wall carbon nanotubes are contacted by titanium electrodes, and gated by…

We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the…

The voltage-controlled Berry phases in two vertically coupled InGaAs/GaAs quantum dots are investigated theoretically. It is found that Berry phases can be changed dramatically from 0 to 2$\pi$ (or 2$\pi$ to 0) only simply by turning the…

We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…

Two-dimensional (2D) semiconductors have emerged as leading candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier…

Quantum networks based on InGaAs quantum dots embedded in photonic crystal devices rely on QDs being in resonance with each other and with the cavities they are embedded in. We developed a new technique based on temperature tuning to…

We realize a hybrid superconductor-semiconductor transmon device in which the Josephson effect is controlled by a gate-defined quantum dot in an InAs/Al nanowire. Microwave spectroscopy of the transmon's transition spectrum allows us to…

External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole…

We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long…

We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb…

Tunable couplers are a key building block of superconducting quantum processors, enabling high on-off ratios for two-qubit entangling interactions. While qubit-qubit interaction can be turned off, residual wavefunctions delocalize…

We show a method for implementing universal quantum computing using of a singlet and triplets of nanowire double quantum dots coupled to a one-dimensional transmission line resonator. This method is attractive for both quantum computing and…

Graphene quantum dots (QDs) are intensively studied as platforms for the next generation of quantum electronic devices. Fine tuning of the transport properties in monolayer graphene QDs, in particular with respect to the independent…

One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and…

Nanoscale superconductor-semiconductor hybrid devices are assembled from InAs semiconductor nanowires individually contacted by aluminum-based superconductor electrodes. Below 1 K, the high transparency of the contacts gives rise to…