Related papers: Gate tunable parallel double quantum dot in InAs d…
We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using…
In quantum nanoelectronics, numerical simulations have become an ubiquitous tool. Yet the comparison with experiments is often done at a qualitative level or restricted to a single device with a handful of fitting parameters. In this work,…
The metallic tip of a scanning force microscope operated at 300 mK is used to locally induce a potential in a fully controllable double quantum dot defined via local anodic oxidation in a GaAs/AlGaAs heterostructure. Using scanning gate…
We discuss a measurement-based implementation of a controlled-NOT (CNOT) quantum gate. Such a gate has recently been discussed for free electron qubits. Here we extend this scheme for qubits encoded in product states of two (or more)…
We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to detect the charge state transition in the other QD (target…
Entanglement, being at the heart of the Einstein-Podolsky-Rosen (EPR) paradox, is a necessary ingredient in processing quantum information. Cooper pairs in superconductors - being composites of two fully entangled electrons - can be split…
It was proposed that a double quantum dot can be used to be a detector of spin bias. Electron transport through a double quantum dot is investigated theoretically when a pure spin bias is applied on two conducting leads contacted to the…
We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual…
Superconducting parametric amplifiers play a crucial role in the preparation and readout of quantum states at microwave frequencies, enabling high-fidelity measurements of superconducting qubits. Most existing implementations of these…
Assisted with linear optical manipulation, single photon, entangled photon pairs, photon measurement, and classical communication, a scheme for two-spin qubits phase gate and teleportation of a CNOT gate between two electron spins from…
Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological quantum computing. Here we report on realization of a quantum…
We present a general route to reduce inhomogeneous broadening in nanodevices due to 1/f noise. We apply this method to a universal two-qubit gate and demonstrate that for selected optimal couplings, a high-efficient gate can be implemented…
We propose a scheme to construct a deterministic CNOT gate on static electron-spin qubits, allowing for deterministic scalable quantum computing in solid-state systems.The excess electron confined in a charged quantum dot inside a…
A challenge for constructing large circuits of superconducting qubits is to balance addressability, coherence and coupling strength. High coherence can be attained by building circuits from fixed-frequency qubits, however, leading…
We propose a scheme for implementing quantum gates and entanglement between spin qubits in the outer dots of a triple-dot system with an empty central dot. The voltage applied to the central dot can be tuned to realize the gate. Our scheme…
We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found…
We report the observation of Josephson diode effect (JDE) in hybrid devices made from semiconductor InAs nanosheets and superconductor Al contacts. By applying an in-plane magnetic field ($B_{\mathrm{xy}}$), we detect non-reciprocal…
We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this end, dual-gate silicon nanowire (SiNW) FETs are fabricated…
Quantum dots embedded in semiconductor photonic nanowires (NW-QDs) can deterministically produce single-photons and entangled photon pairs at high repetition rates. These photons can be efficiently coupled from the photonic nanowire into…
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…