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X-ray detectors made of crystalline silicon have several advantages including low dark currents, fast charge collection and high energy resolution. For high-energy x-rays, however, silicon suffers from its low atomic number, which might…
We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a…
Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…
CdTe is one of the leading materials for low cost, high efficiency thin-film solar cells, because it has a high absorption coefficient and a nearly ideal band gap of 1.48 eV for solar cell according to the Shockley-Queisser limit. However,…
X-ray polarization measurement of cosmic sources provides two unique parameters namely degree and angle of polarization which can probe the emission mechanism and geometry at close vicinity of the compact objects. Specifically, the hard…
Charge density waves (CDWs) are symmetry-broken ground states that commonly occur in low-dimensional metals due to strong electron-electron and/or electron-phonon coupling. The non-equilibrium carrier distribution established via…
CdTe has been a special semiconductor for constructing the lowest-cost solar cells and the CdTe-based Cd1-xZnxTe alloy has been the leading semiconductor for radiation detection applications. The performance currently achieved for the…
Strip and pixels sensors, fabricated on high resistivity silicon substrate, normally of p-type, are used in detectors for High Energy Physics (HEP) typically in a hybrid detector assembly. Furthermore, and owing to their inherent advantages…
Silicon strip sensors have long been a reliable technology for particle detection. Here, we push the limits of silicon tracking detectors by targeting an unprecedentedly low material budget of 2%-7% $X_0$ in an 8-layer 4 m$^2$ detector…
We use numerical simulations to investigate the properties of metal contacts to three-dimensional arrays of carbon nanotubes (CNTs). For undoped arrays top-contacted with high or low work function metals, electrostatic screening is very…
The Cadmium Zinc Telluride Imager (CZTI) onboard AstroSat is designed for hard X-ray imaging and spectroscopy in the energy range of 20 - 100 keV. The CZT detectors are of 5 mm thickness and hence have good efficiency for Compton…
CLIC is a proposed linear $e^+e^-$ collider with center-of-mass energies of up to 3 TeV. Its main objectives are precise top quark, Higgs boson and Beyond Standard Model physics. In addition to spatial resolutions of a few micrometers and a…
Processes of growth of semi-insulating Cd(1-x)Zn(x)Te:Cl crystals (x = 0.0002 and 0.1) of n-type conductivity are investigated. From the grown crystals detectors for X-ray computer tomography with small value of photocurrent memory…
In this study, we evaluate and compare the pulse shape discrimination (PSD) performance of multipixel photon counters (MPPCs, also known as silicon photomultiphers - SiPMs) with that of a typical photomultiplier tube (PMT) when testing…
Driven by the growing demand for miniaturized spectrometers for in-situ analysis, and point-of-care diagnostics, conventional spectrometers are often constrained by bulky architectures and pathlength-limited spectral resolution. Achieving…
The development of large-area homogeneous photo-detectors with sub-millimeter path lengths for direct Cherenkov light and for secondary-electrons opens the possibility of large time-of-flight systems for relativistic particles with…
We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…
Narrow and brilliant spectral lines are essential assets for high-resolution spectroscopy as well as for precision sensing and optomechanics. In semiconductor structures and, in particular, in the well-established (Al,Ga)As material system,…
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ SixGe1-x -- a…
Cs-based semiconductors like $\mathrm{Cs_3Sb}$ and $\mathrm{Cs_2Te}$ are currently used as photocathodes in particle accelerators. Their performance as electron sources critically depends on their interaction with intense laser sources. In…