Related papers: Sub-Microsecond X-Ray Imaging Using Hole-Collectin…

We present experimental studies on the charge transfer inefficiency (CTI) of charge-coupled device (CCD) developed for the soft X-ray imaging telescope, Xtend, aboard the XRISM satellite. The CCD is equipped with a charge injection (CI)…

Cadmium Telluride (CdTe) is a high-Z material with excellent photon radiation absorption properties, making it a promising material to include in radiation detection technologies. However, the brittleness of CdTe crystals as well as their…

A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to…

Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interface by a focussed sub-nanosecond laser with a wavelength of…

CdTe and CdS are emerging as the most promising materials for thin film photovoltaics in the quest of the achievement of grid parity. The major challenge for the advancement of grid parity is the achievement of high quality at the same time…

CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…

Lifetime measurements of b -decaying highly charged ions have been performed in the storage ring CSRe by applying the isochronous Schottky mass spectrometry. The fully ionized 49Cr and 53Fe ions were produced in projectile fragmentation of…

The High Luminosity LHC (HL-LHC) upgrade requires the planned Inner Tracker (ITk) of the ATLAS detector to tolerate extremely high radiation doses. Specifically, the innermost parts of the pixel system will have to withstand radiation…

Many consumer technologies and scientific methods rely on photodetection of infrared light. We report a Schottky photodetector operating below silicon's band gap energy, through hot carrier injection from a nanoscale metallic absorber. Our…

Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…

X-rays astrophysical sources have been almost exclusively characterized through imaging, spectroscopy and timing analysis. Nevertheless, more observational parameters are needed because some radiation mechanisms present in neutrons stars or…

We employ ultra-broadband terahertz-midinfrared probe pulses to characterize the optical response of photoinduced charge-carrier plasmas in high-resistivity silicon in a reflection geometry, over a wide range of excitation densities…

We investigated the influence of deep levels on the electrical transport properties of CdZnTeSe radiation detectors by comparing experimental data with numerical simulations based on simultaneous solution of drift-diffusion and Posisson…

We investigate the time-resolved photocurrent response of CdSe quantum dot (QD) thin films sensitized with zinc beta-tetraaminophthalocyanine (Zn4APc) on three different substrates, namely silicon with 230 nm SiO2 dielectric, glass as well…

Dynamic x-ray studies may reach temporal resolutions limited by only the x-ray pulse duration if the detector is fast enough to segregate synchrotron pulses. An analog integrating pixel array detector with in-pixel storage and temporal…

Polarization imaging can yield crucial information in multiple applications of remote sensing, such as characterization of clouds, aerosols, and the Aurora Borealis. Some applications require sub-percent polarimetric sensitivity and…

We propose a new scintillation-type detector in which high-energy radiation produces electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The…

We present a study of deep levels in CdZnTeSe radiation-detection materials. The approach relies on electrical methods that combine time and temperature evolution of the electric field and electric current after switching on the bias…

A 100um thick silicon detector with 1mm2 pad readout optimized for sub-nanosecond time resolution has been developed and tested. Coupled to a purposely developed amplifier based on SiGe HBT technology, this detector was characterized at the…

The real-time power monitoring of gyrotron is one of the key issues in the operation of electron cyclotron resonance heating system. The detector can be used for real-time power monitoring. We analyzed the principle of diode detection and…