Related papers: Sub-Microsecond X-Ray Imaging Using Hole-Collectin…

Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths,…

We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and x-ray tube energy. The material is a photoresistor and can be biased to collect either…

In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low…

We present a strip transition-edge sensor microcalorimeter linear array detector developed for energy dispersive X-ray diffraction imaging and Compton scattering applications. The prototype detector is an array of 20 transition-edge-sensors…

CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low…

CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate…

Low noise CCDs fully-depleted up to 675 micrometers have been identified as a unique tool for Dark Matter searches and low energy neutrino physics. The charge collection efficiency (CCE) for these detectors is a critical parameter for the…

We have developed a large CdTe pixel detector with dimensions of 23.7 x 13.0 mm and a pixel size of 448 x 448 um^2. The detector is based on recent technologies of an uniform CdTe single crystal, a two-dimensional ASIC, and stud…

We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor technology. The micro-holes help to enhance the optical…

Photons preferentially Compton scatter perpendicular to the plane of polarisation. This property can be exploited to design instruments to measure the linear polarisation of hard X-rays ($\sim$10 - 100 keV). Photons may undergo two…

Transferring the nanocrystals (NCs) from the laboratory environment toward practical applications has raised new challenges. In the case of NCs for display and lightning, the focus was on reduced Auger recombination and maintaining…

CdTe is the most commercially successful thin-film photovoltaic technology to date. The recent development of Se-alloyed CdSe$_{x}$Te$_{1-x}$ layers in CdTe solar cells has led to higher device efficiencies, due to a lowered bandgap…

Non-destructive Schottky detectors are indispensable devices widely used in experiments at heavy-ion storage rings. In particular, they can be used to accurately determine the masses and lifetimes of short-lived exotic nuclear species.…

We have synthesized high-quality, micrometer-sized, single-crystal GeSe nanosheets using vapor transport and deposition techniques. Photoresponse is investigated based on mechanically exfoliated GeSe nanosheet combined with Au contacts…

Semiconductor detectors made of CdTe crystal have high gamma-ray detection efficiency and are usable at room temperature. However, the energy resolution of CdTe detectors for MeV gamma-rays is rather poor because of the significant hole…

With an expected ten-fold increase in luminosity in S-LHC, the radiation environment in the tracker volumes will be considerably harsher for silicon-based detectors than the already harsh LHC environment. Since 2006, a group of CMS…

Digital camera sensors utilize color filters on photodiodes to achieve color selectivity. As color filters and photosensitive silicon layers are separate elements, these sensors suffer from optical cross-talk, which sets limits to the…

We have evaluated the performance of a fine pitch CdTe Double-sided Strip Detector (CdTe-DSD), which was originally developed for the focal plane detector of a hard X-ray telescope to observe the Sun. The detector has a thickness of 750 um…

Cadmium telluride (CdTe), lead sulfide (PbS), and indium tin oxide (ITO) play crucial roles in various electronic applications where laser treatment enables precise modification of their distinctive electronic characteristics. This study…

Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film…