Related papers: Spin-accumulation capacitance and its application …
We have investigated correlation between spin polarization and magnetotransport in a high mobility silicon inversion layer which shows the metal-insulator transition. Increase in the resistivity in a parallel magnetic field reaches…
We describe theoretically the process of multi-beam reflection in a two-dimensional electron system with a lateral potential barrier. Due to spin-orbital interaction, the reflection process leads to the formation of three beams with…
For the technologically relevant spin Hall effect most theoretical approaches rely on the evaluation of the spin-conductivity tensor. In contrast, for most experimental configurations the generation of spin accumulation at interfaces and…
We study spin transport in lateral spin valves with constricted channels. Using electromigration, we modulate the spin accumulation by continuously varying the width of the non-magnetic channel at a single location. By fitting the non-local…
In the context of spin electronics, the two spin-channel model assumes that the spin carriers are composed of two distinct populations: the conduction electrons of spin up, and the conduction electrons of spin down. In order to distinguish…
We have reconsidered the problem of spin injection across ferromagnet/non-magnetic-semiconductor (FM/NMS) and dilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, for structures with \textit{finite} magnetic layers (FM or…
We study the nonequilibrium spin transport through a quantum dot containing two spin levels coupled to the magnetic electrodes. A formula for the spin-dependent current is obtained and is applied to discuss the linear conductance and…
We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate, that we can switch between capacitive and…
Due to the spin-orbital coupling in a semiconductor quantum dot, a freely precessing electron spin produces a time-dependent charge density. This creates a sizeable electric field outside the dot, leading to promising applications in…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…
In a thin strip of a two-dimensional semiconductor electronic system, spin-orbit coupling may be induced near both edges of the strip due to the substantial spatial variation of the confining potential in the boundary regions. In this paper…
The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization…
While tremendous success has been achieved to date in creating both single phase and composite magnetoelectric materials, the quintessential electric-field control of magnetism remains elusive. In this work, we demonstrate a linear…
The interplay between spin and charge degrees of freedom in low-dimensional systems is a cornerstone of modern spintronics, where achieving all-electrical control of spin currents is a major goal. Spin-orbit interactions provide a promising…
Topological electromagnetism owing to nontrivial momentum-space topology of electrons in insulators gives rise to diverse anomalous magnetoelectric responses. While conventional inductors and capacitors are based on classical…
The magnetic field dependence of the capacitance of Pd-AlOx-Al thin-film structures has been measured. The observed quadratic dependence of capacitance on magnetic field is consistent with a theoretical model that includes the effect of a…
In this work we study the spin accumulation due to an in-plane electric field in an asymmetric topological insulator (TI) thin film system with an out of plane magnetic field and an in-plane magnetization. A TI thin film differs from the…
This study explores the time-dependent spin transport phenomena in magnetic heterostructures under alternating currents (AC), advancing the relatively underdeveloped field of alternating spintronics. Employing a time-dependent spin…
Capacitance of a nanoscale system is usually thought of having two contributions, a classical electrostatic contribution and a quantum contribution dependent on the density of states and/or molecular orbitals close to the Fermi energy. In…
The electrical creation and detection of spin accumulation in ferromagnet/semiconductor Schottky contacts that exhibit highly non-linear and rectifying electrical transport is evaluated. If the spin accumulation in the semiconductor is…