Related papers: Pumping laser excited spins through MgO barriers
Temperature plays an important role in spin torque switching of magnetic tunnel junctions causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the…
Thermoelectric effects have been applied to power generators and temperature sensors that convert waste heat into electricity. The effects, however, have been limited to electrons to occur, and inevitably disappear at low temperatures due…
Magnetic tunnel junctions (MTJs) based on all-two dimensional (2D) van der Waals heterostructures with sharp and clean interfaces in atomic scale are essential for the application of next-generation spintronics. However, the lack of…
Magnetic tunnel junctions with Fe1+xCo2-xSi (0 < x < 1) electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262 % at 15 K and 159 % at room temperature were…
We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy…
In this paper, the generation of magnetic fields in a nonuniformly rotating layer of finite thickness of an electrically conducting fluid by thermomagnetic (TM) instability. This instability arises due to the temperature gradient $\nabla…
Sputter thin film deposition after photolithography often produces unwanted spikes along the side edges. These spikes are a significant issue for the development of magnetic tunnel junction (MTJ)-based memory and molecular spintronics…
The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of…
Magnetic tunnel junctions (MTJs) have been widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) nature of two-dimensional (2D) magnets with…
Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) - is a challenge in fundamental science and also important for technological device…
The probability switching characteristics in spin transfer torque magnetic tunnel junctions (STT-MTJs) are simulated by considering thermal noise using a spin-circuit module. Thermal noise significantly affects the probability switching for…
High impedance (about 1 Megaohm) magnetic tunnel junctions (MTJs) are used to observe and record the magnetodynamics of the nanomagnets that form the junctions themselves. To counteract the bandwidth limitations caused by the high impedance…
Thermally induced spin-dependent transport across magnetic tunnel junctions is theoretically investigated. We analyze the thermal analog of Slonczewski's model (as well as its limiting case---Julliere's model) of tunneling magnetoresistance…
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…
To realize a thermoelectric power generator, typically a junction between two materials with different Seebeck coefficient needs to be fabricated. Such difference in Seebeck coefficients can be induced by doping, which renders difficult…
Altermagnets with nonrelativistic momentum-dependent spin splitting and compensated net magnetic moments have recently garnered significant interest in spintronics, particularly as pinning layers in magnetic tunnel junctions (MTJs).…
We present a detailed study of the spin-torque diode effect in CoFeB/MgO/CoFe/NiFe magnetic tunnel junctions. From the evolution of the resonance frequency with magnetic field at different angles, we clearly identify the free-layer mode and…
The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean…
We report a theoretical study of the macroscopic quantum tunneling (MQT) in small Josephson junctions containing randomly distributed two-level systems. We focus on the magnetic field dependent crossover temperature $T_{cr}$ between the…
The Heusler alloy is used as an electrode of magnetic tunneling junctions. The junctions are deposited by magnetron dc sputtering using shadow mask techniques with AlO_{x} as a barrier and cobalt as counter electrode. Measurements of the…