Related papers: Pumping laser excited spins through MgO barriers
Molecular conduction channels between two ferromagnetic electrodes can produce strong exchange coupling and dramatic effect on the spin transport, thus enabling the realization of novel logic and memory devices. However, fabrication of…
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have…
We have studied thermoelectric effect of a Kane-Mele normal-insulator-superconductor (KMNIS) junction at ultra-low temperatures using a modified version of the well-known Blonder-Tinkham-Klapwijk (BTK) theory. Since both the (electronic)…
Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each…
We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelectric properties upon reversal of the magnetisation of the…
When a charge current is applied to a junction comprising two different conductors, its temperature increases or decreases depending on the direction of the charge current. This phenomenon is called the Peltier effect, which is used in…
We have synthesized MgB2/Pb planar junctions to study the temperature and field dependence of the superconducting energy gap of MgB2. The major peak occurs at Delta of about 2 meV, and this corresponds to a 2Delta/kBTc value of 1.18. While…
Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed,…
In this work we investigate the effect of the mechanical stress on the performance of magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy. We developed a 4-point bending setup, that allows us to apply a constant stress…
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial…
We report direct experimental evidence of room temperature spin filtering in magnetic tunnel junctions (MTJs) containing CoFe2O4 tunnel barriers via tunneling magnetoresistance (TMR) measurements.…
We investigated the effect of using a synthetic ferrimagnetic (SyF) free layer in MgO-based magnetic tunnel junctions (MTJs) on current-induced magnetization switching (CIMS), particularly for application to spin-transfer torque random…
We study the phenomenon of macroscopic quantum tunneling (MQT) in a finite size Josephson junction (JJ) with an externally applied magnetic field. As it is well known, the problem of MQT in a point-like JJ is reduced to the study of the…
We investigate the tunneling magnetoresistance (TMR) effect using the lattice models which describe the magnetic tunnel junctions (MTJ). First, taking a conventional ferromagnetic MTJ as an example, we show that the product of the local…
Heating caused by electrons with excess kinetic energy has been investigated in a magnetic two-dimensional electron gas, M2DEG, in HgMnTe/HgCdTe(001) quantum wells. The temperature of the Mn ions, T_Mn, has been determined by the node…
We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport calculations. For comparison we study the tunneling magneto-Seebeck effect in…
Heat-to-charge conversion has traditionally been realized via the Seebeck effect in conductors and pyroelectricity in polar insulators. Here, we demonstrate that temperature gradients generate electrical polarization, namely…
Efficient operation of electronic nanodevices at ultrafast speeds requires understanding and control of the currents generated by femtosecond bursts of light. Ultrafast laser-induced currents in metallic nanojunctions can originate from…
We identify a mechanism for magnetic field generation in the interaction of intense electromagnetic waves and underdense plasmas. We show that Raman scattered plasma waves trap and heat the electrons preferentially in their propagation…
The temperature of the semiconductor diode increases under strong light illumination whether thermoelectric cooler is installed or not, which changes the output wavelength of the laser (Lee M. S. et al., 2017). However, other…