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In orthogonal time frequency space (OTFS) systems, the impact of frequency-dependent Doppler which is referred to as the Doppler squint effect (DSE) is accumulated through longer duration, whose negligence has prevented OTFS systems from…

This paper examines the performance degradation of a MOS device fabricated on silicon-on-insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is scaled to meet the increasing demand for high-speed…

CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with…

Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device…

Design space exploration (DSE) plays an important role in optimising quantum circuit execution by systematically evaluating different configurations of compilation strategies and hardware settings. In this work, we study the impact of…

Recently, the importance of the electronic many-body effect in the dark matter (DM) detection has been recognized and a coherent formulation of the DM-electron scattering in terms of the dielectric response of the target material has been…

In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…

Stepped well-ordered semiconductor surfaces are important as nanotemplates for the fabrication of one-dimensional nanostructures which are candidates of intriguing electronic properties. Therefore a detailed understanding of the underlying…

We report here on results of experimental-theoretical investigation of high-order harmonic generation (HHG) in layers of CdSe semiconductor quantum dots of different sizes and a reference bulk CdSe thin film. We observe a strong decrease in…

Using density functional theory (DFT) based electronic structure calculations, the effects of morphology of semiconducting nano structures on the magnetic interaction between two magnetic dopant atoms as well as a possibility of tuning band…

In this work, we analyze the ferroelectric (FE) domain-wall (DW) induced negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (MFIS) stacks. Our analysis is based on 2D phase field…

Future complementary metal oxide semiconductor (CMOS) scaling for advanced integrated circuit (IC) technologies may well depend on "More than Moore" (MtM) approaches using heterogeneous integration of semiconductor-based devices. In order…

Silicon-based micro-electromechanical systems (MEMS) can be fabricated using bulk and surface micromachining technology. A micro mirror designed as an oscillatory MEMS constitutes a prominent example. Typically, in order to minimize energy…

We discuss some examples where numerical simulations based on effectively fabricated nanostructures can provide additional insights into an experiment. Focusing on plasmonics, we study Fano resonant systems for optical trapping, realistic…

More recently STM experimets present firm evidence of some kind of charge modulation in underdoped cuprates. The peculiar observations of the above experiments are located in the so called pseudo-gap region of the phase diagram, just over…

We examine the effect of an FET geometry on the charge ordering phase diagram of transition metal oxides using numerical simulations of a semiclassical model including long-range Coulomb fields, resulting in nanoscale pattern formation. We…

Product distribution matching (PDM) is proposed to generate target distributions over large alphabets by combining the output of several parallel distribution matchers (DMs) with smaller output alphabets. The parallel architecture of PDM…

Proximity effect on field-effect characteristic (FEC) in double-wall carbon nanotubes (DWCNTs) is investigated. In a semiconductor-metal (S-M) DWCNT, the penetration of electron wavefunctions in the metallic shell to the semiconducting…

The influence of the orientation of gold nanorods in different assemblies has been investigated using the Finite Difference Time Domain (FDTD) simulation method. To understand the relative orientation, we vary the size and angle in dimer…

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…