Related papers: Purely Antiferromagnetic Magnetoelectric Random Ac…
Electric field-induced magnetization switching in multiferroics holds profound promise for ultra-low-energy computing in beyond Moore's law era. Bistable nanomagnets in the multiferroics are usually deemed to be suitable for storing a…
The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation non-volatile memory (NVM) due to their superior electrical properties. Organic…
A novel class of antiferromagnets, dubbed altermagnets, exhibit a non-relativistically spin-split band structure reminiscent of $d$-wave superconductors, despite the absence of net magnetization. This unique characteristic enables…
Antiferromagnetic materials are magnetic inside, however, the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets invisible on…
The spin filtering effect, distinct decaying lengths experienced by oppositely spin-polarized electrons in a magnetic barrier, generally occurs in ferromagnetic (FM) insulators or semiconductors. With the rise of altermagnetic (ALM)…
Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging…
We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer deposited (ALD) hafnium zirconium oxide (HZO) is used as the…
Antiferromagnetic (AFM) materials offer a promising platform for exploring novel couplings between altermagnetic (AM) spin-splitting and magneto-optical Kerr effect (MOKE), with potential applications in next-generation quantum…
Multiferroics, which combine ferroelectric and magnetic order, offer a transformative platform for next-generation electronic devices. However, the intrinsic competition between the mechanisms driving ferroelectricity and magnetism in…
Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics, and holds promise for human-interfacing applications. The prevailing mechanical approach is locally induced…
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room…
We propose a novel ferroelectric switchable altermagnetism effect, the reversal of ferroelectric polarization is coupled to the switching of altermagnetic spin splitting. We demonstrate the design principles for the ferroelectric…
Antiferromagnetic spintronics actively introduces new principles of magnetic memory, in which the most fundamental spin-dependent phenomena, i.e. anisotropic magnetoresistance effects, are governed by an antiferromagnet instead of a…
We propose a non-volatile memory element based on a lateral ferromagnetic Josephson junction with spin-orbit coupling and out-of-plane magnetization. The interplay between the latter and the intrinsic exchange field of the ferromagnet leads…
Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the N\'eel along different orientations. Variations of the…
Antiferromagnetic (AFM) materials possess a well-recognized potential for ultrafast data processing thanks to their intrinsic ultrafast spin dynamics, absence of stray fields, and large spin transport effects. The very same properties,…
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer…
My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…
The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM)…
Multiferroic materials provide robust and efficient routes for the control of magnetism by electric fields, which has been diligently sought after for a long time. The two-dimensional (2D) vdW multiferroics is a more exciting endeavour. To…