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Embedded non-volatile memory technologies such as resistive random access memory (RRAM) and spin-transfer torque magnetic RAM (STT MRAM) are increasingly being researched for application in neuromorphic computing and hardware accelerators…
The balance between low power consumption and high efficiency in memory devices is a major limiting factor in the development of new technologies. Magnetic random access memories (MRAM) based on CoFeB/MgO magnetic tunnel junctions (MTJs)…
Antiferromagnets are emerging as promising alternatives to ferromagnets in spintronics applications. A key feature of antiferromagnets is their anisotropic magnetoresistance (AMR), which has the potential to serve as a sensitive marker for…
Altermagnets, a newly discovered class of magnets, integrate the advantages of both ferromagnets and antiferromagnets, such as enabling anomalous transport without stray fields and supporting ultrafast spin dynamics, offering exciting…
A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on a pico-second time scale. Devices based on this all-optical switching (AOS) mechanism are competitive candidates for ultrafast memory…
We describe a new class of systems exhibiting return point memory (RPM) that are different from those discussed before in the context of ferromagnets. We show numerically that one dimensional random Ising antiferromagnets have RPM, when…
Heat waste is a bottleneck in the development of green information technologies and much effort has been devoted to suppress the heating effect in both electronic and spintronic devices. Here we take an alternative approach and show that…
Phenomena originated from spin-orbit interaction, such as magnetic anisotropy (MA), Rashba-type interactions, or topological insulators, have drawn huge attention for its intriguing physics. In particular, the search for a novel…
Recent advances in tuning the correlated behavior of graphene and transition-metal dichalcogenides (TMDs) have opened a new frontier in the study of many-body physics in two dimensions and promise exciting possibilities for new quantum…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
Increasing the magnetic data recording density requires reducing the size of the individual memory elements of a recording layer as well as employing magnetic materials with temperature-dependent functionalities. Therefore, it is predicted…
Applications of magnetic memory devices greatly benefit from ultra-fast, low-power switching. Here we propose how this can be achieved efficiently in a nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane…
Compute-in-memory (CiM) is a promising approach to alleviating the memory wall problem for domain-specific applications. Compared to current-domain CiM solutions, charge-domain CiM shows the opportunity for higher energy efficiency and…
We present a phenomenological theory of filamentary resistive random access memory (RRAM) describing the commonly observed features of their current-voltage characteristics. Our approach follows the approach of thermodynamic theory…
Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresistance (TMR) make state-of-the-art MRAM interfaces…
Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is…
Heat-assisted magnetic recording (HAMR) is a recent advancement in magnetic recording, allowing to significantly increase the areal density capability (ADC) of hard disk drives (HDDs) compared to the perpendicular magnetic recording (PMR)…
Dielectric capacitors hold a tremendous advantage for energy storage due to their fast charge/discharge times and stability in comparison to batteries and supercapacitors. A key limitation to today's dielectric capacitors, however, is the…
Antiferromagnets (AFMs) exhibit spin arrangements with no net magnetization, positioning them as promising candidates for spintronics applications. While electrical manipulation of the single-crystal AFMs, composed of periodic spin…
Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the…