Related papers: Ballistic quantum transport through Ge/Si core/she…
We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the…
Elemental tellurium (Te) is a compelling van der Waals material due to its interesting chiral crystal structure and predicted topological properties. Here, we report the fabrication and comprehensive quantum transport study of devices based…
We study the transport properties of $HgTe$-based quantum wells containing simultaneously electrons and holes in magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found…
The presence of strong disorder in graphene nanoribbons yields low-mobility diffusive transport at high charge densities, whereas a transport gap occurs at low densities. Here, we investigate the longitudinal and transverse…
The unexpected "0.7" plateau of conductance quantisation is usually observed for ballistic one-dimensional devices. In this work we study a quasi-ballistic quantum wire, for which the disorder induced backscattering reduces the conductance…
The spin properties of charge carriers confined in CuCl semiconductor nanocrystals (NCs) of different sizes (radius from 1.8 nm up to 28 nm) crystallized in a glass matrix are studied experimentally and theoretically. By means of…
We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model…
Many-body effects on tunneling of electrons in semiconductor nanowhiskers are investigated in a magnetic quantum limit. We consider the system with which bulk and edge states coexist. We show that interaction parameters of edge states are…
Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate…
Constricting transport through a one-dimensional quantum point contact in the quantum Hall regime enables gate-tunable selection of the edge modes propagating between voltage probe electrodes. Here we investigate the quantum Hall effect in…
I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties). II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance…
We simulate the electron transport in vertical bi-layer nanowire which can be fabricated in molecular beam epitaxy process with lateral confinement potential formed by means of cleaved overgrowth or surface oxidization methods giving…
The experimental observation of the long-sought quantum anomalous Hall effect was recently reported in magnetically doped topological insulator thin films [Chang et al., Science 340, 167 (2013)]. An intriguing observation is a rapid…
We report electrical transport measurements of arrays of PbSe nanocrystals forming the channels of field effect transistors. We measure the current in these devices as a function of source-drain voltage, gate voltage and temperature.…
The exploitation of the spin in charge-based systems is opening revolutionary opportunities for device architecture. Surprisingly, room temperature electrical transport through magnetic nanowires is still an unresolved issue. Here, we show…
Traditionally, the understanding of quantum transport, coherent and ballistic1, relies on the measurement of macroscopic properties such as the conductance. While powerful when coupled to statistical theories, this approach cannot provide a…
Linear and non-linear transport properties through an atomic-size point contact based on oxides two-dimensional electron gas is examined using the tight-binding method and the $\mathbf{k\cdot p}$ approach. The ballistic transport is…
Strain modulated electronic properties of Si/Ge core-shell nanowires along [110] direction were reported based on first principles density-functional theory calculations. Particularly, the energy dispersion relationship of the…
Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a high mobility Si/SiGe 2DEG in a bended nanowire geometry…
We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband…