Constricting transport through a one-dimensional quantum point contact in the quantum Hall regime enables gate-tunable selection of the edge modes propagating between voltage probe electrodes. Here we investigate the quantum Hall effect in a quantum point contact fabricated on low disorder strained germanium quantum wells. For increasing magnetic field, we observe Zeeman spin-split 1D ballistic hole transport evolving to integer quantum Hall states, with well-defined quantised conductance increasing in multiples of e2/h down to the first integer filling factor ν=1. These results establish strained germanium as a viable platform for complex experiments probing many-body states and quantum phase transitions.
@article{arxiv.2510.12554,
title = {Conductance Plateaus at Quantum Hall Integer Filling Factors in Germanium Quantum Point Contacts},
author = {Karina Hudson and Davide Costa and Davide Degli Esposti and Lucas E. A. Stehouwer and Giordano Scappucci},
journal= {arXiv preprint arXiv:2510.12554},
year = {2025}
}